RMLV0808BGSB-4S2#AA0 Allicdata Electronics
Allicdata Part #:

RMLV0808BGSB-4S2#AA0-ND

Manufacturer Part#:

RMLV0808BGSB-4S2#AA0

Price: $ 6.59
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 8M PARALLEL 44TSOP
More Detail: SRAM Memory IC 8Mb (1M x 8) Parallel 45ns
DataSheet: RMLV0808BGSB-4S2#AA0 datasheetRMLV0808BGSB-4S2#AA0 Datasheet/PDF
Quantity: 1000
1 +: $ 5.99130
10 +: $ 5.54652
25 +: $ 5.42102
50 +: $ 5.39129
100 +: $ 4.74629
250 +: $ 4.51143
500 +: $ 4.46513
1000 +: $ 4.31629
Stock 1000Can Ship Immediately
$ 6.59
Specifications
Series: --
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Introduction

RMLV0808BGSB-4S2#AA0 is a type of memory with a variety of applications and working principles. This article will explore the application fields, how it works and how it is implemented.

Application Field

RMLV0808BGSB-4S2#AA0 is a type of non-volatile random-access memory (NVRAM) that has a number of uses. NVRAM is used in industrial and medical applications, such as controlling medical and industrial machinery, data control systems, system clocks, and as a storage media such as memory cards and USB drives. It is also used in consumer electronics and automotive applications such as controlling audio and video equipment, automating processes, and in robotics.

Working Principle

RMLV0808BGSB‐4S2#AA0’s working principle is based on the charge trap flash (CTF) memory technology. CTF is a type of Non-Volatile Memory (NVM) that uses two transistors and two capacitors, with a single layer of gate oxide. As voltage is applied to the transistors, the capacitors store and discharge electrons to perform operations. Since data is stored as charges in the memory, CTF does not require periodic refresh cycles as other types of NVM do.

The advantages of CTF compared to other types of NVM include a high degree of scalability and configuration flexibility. CTF is a versatile memory technology that can be configured in small, medium, and large cells, which allows it to store a wide range of information and data. In addition, CTF has a low power consumption and no extra external components are required to operate.

Implementation

The RMLV0808BGSB‐4S2#AA0 is usually implemented using an array of memory cells connected to each other via a number of buses. Each memory cell is composed of two transistors and two capacitors, and the cells are arranged in a 4x4 grid. The cells are interconnected in two ways: by a bus which runs the length of each row, and by a bus which runs the length of each column. The buses are used to read and write data to the memory cell, while the capacitors are used to store the data.

The RMLV0808BGSB‐4S2#AA0 is usually used in conjunction with a controller or flash controller. The controller is responsible for managing the memory cells and for controlling operations such as writing, erasing, and programming. The controller also ensures that the data stored in the memory cells remains stable, and that the cells are powered correctly.

Conclusion

RMLV0808BGSB‐4S2#AA0 is a type of non-volatile random-access memory (NVRAM). It is used in a variety of industrial, medical, and consumer applications. The memory is based on the charge trap flash (CTF) memory technology, which has a high degree of scalability and configurability. The RMLV0808BGSB‐4S2#AA0 is usually implemented using an array of memory cells connected to each other via a number of buses, and a controller or flash controller is used to manage the cells.

The specific data is subject to PDF, and the above content is for reference

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