| Allicdata Part #: | RN1101ACT(TPL3)TR-ND |
| Manufacturer Part#: |
RN1101ACT(TPL3) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS NPN 0.1W CST3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: | RN1101ACT(TPL3) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 80mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 4.7 kOhms |
| Resistor - Emitter Base (R2): | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | CST3 |
Description
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RN1101ACT(TPL3) is a single, pre-biased, bipolar transistors. It is a multi-purpose device that is designed to deliver high performance and reliable operation in a wide range of applications. Some of the advantages that this type of transistor offers are high switching speeds, high current gain, high reliability, low voltage drop and low noise. The RN1101ACT(TPL3) is an NPN type transistor with an emitter, base and collector. The emitter is connected to ground and the collector is connected to the power source. The transistor works by controlling the current at the base, allowing the collector current to be controlled by the base current. The working principle of this transistor is based on a concept known as "voltage gain". The voltage gain is a measure of the amount of current that is allowed to flow from the collector to the base when a certain voltage is applied to the base. This gain is determined by the ratio of the current at the collector to the current at the base. As the base voltage increases, the current at the collector decreases and vice versa. This leads to an increase in the voltage gain of the device, allowing the transistor to operate at higher current levels without any increase in voltage. This allow RN1101ACT(TPL3) to be used in a variety of applications where high levels of control are required. It can be used in switching power supply circuits, power amplifiers, audio amplifiers, and in many other types of applications.The RN1101ACT(TPL3) also has many other unique features that make it a desirable component in certain applications. These include a low base-emitter leakage, fast switching speeds and low noise. The low base-emitter leakage means that the transistor can shut off quickly and reliably when the input signal is removed, allowing for faster or smoother operation in many circuits. The fast switching speed is useful for controlling high current loads, as it allows for fast, accurate and reliable switching between different levels of current. Finally, the low noise operation makes this transistor ideal for use in sensitive applications, such as audio processing. Overall, the RN1101ACT(TPL3) is a versatile, reliable and efficient transistor which can be used in a variety of applications. Its unique features make it ideal for applications where high levels of control and performance are required.The specific data is subject to PDF, and the above content is for reference
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RN1101ACT(TPL3) Datasheet/PDF