RN1118MFV,L3F Allicdata Electronics
Allicdata Part #:

RN1118MFVL3F-ND

Manufacturer Part#:

RN1118MFV,L3F

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: X34 PB-F VESM TRANSISTOR PD 150M
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1118MFV,L3F datasheetRN1118MFV,L3F Datasheet/PDF
Quantity: 1000
8000 +: $ 0.01826
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM
Description

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The RN1118MFV,L3F is a single, pre-biased bipolar junction transistor (BJT). It is a high-power, high-speed transistor with an extremely low gate-source capacitance. Its main application is for use in switching applications where high speeds and high efficiency are essential.

The key features of the RN1118MFV,L3F include its extremely low gate-source capacitance, its wide operating voltage range (6 to 18V), and its high gain (up to 400). Its high efficiency makes it suitable for both switching and linear applications. The transistor is available in a standard TO220-packaged form.

Understanding the working principle of the RN1118MFV,L3F is the key to understanding its various applications. The transistor works by taking a voltage input from the gate and passing it to the drain. The transistor operates in a linear fashion, with the base-to-emitter voltage being relatively constant over the range of operating voltages. This allows the transistor to efficiently transfer power from the gate to the drain, allowing it to be used as a switch with high switching speed.

The RN1118MFV,L3F is used in a variety of applications, ranging from high-power power amplifiers to ultra-fast switches. In the power amplifier application, the transistor amplifies the gate voltage to the drain, allowing for much higher signals. In switch applications, the transistor\'s high-speed switching allows for ultra-fast switching times. This is ideal for high-speed switching and circuits where power consumption is an issue.

The RN1118MFV,L3F is also used in non-power applications, such as timing circuits and pulse generation. The transistor\'s low gate-source capacitance allows for accurate timing of pulses, making it ideal for tasks such as pulse generation and pulse width modulation. The RN1118MFV,L3F also provides long-term stability, ensuring that its performance remains consistent over long periods of time.

The RN1118MFV,L3F is an extremely versatile transistor, allowing it to be used in a wide range of applications. Its low gate-source capacitance, wide operating voltage range, and high gain make it an ideal choice for applications where high performance is required. For these reasons, the RN1118MFV,L3F is an essential component in any engineer\'s toolbox.

The specific data is subject to PDF, and the above content is for reference

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