RN1107CT(TPL3)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RN1107CT (or TPL3) transistor is a single pre-biased vertical power transistor primarily designed for use with horizontal direct-view colour Colour Television applications. It is a type of bipolar junction transistor (BJT) which is a semiconductor device comprised of three layers of alternating p-type and n-type semiconductor materials. This type of transistor is characterized by its ability to amplify signals, switch between two states, is usually of small size, and is well-suited for digital circuits.

The RN1107CT is widely used in horizontal deflection circuits of colour television sets. The device consists of a vertical collector to emitter gain that is formed one stage at a time. Due to its vertical PN structure, it can provide higher gain, lower saturation voltage, and better uniformity characteristics when compared with traditional horizontal transistors. Its built-in base-emitter bias voltage reduces the number of components required in deflection circuits and reduces system power consumption.

The general working principle of an RN1107CT is based on the same principles as a standard BJT. It uses a three-layer semiconductor structure consisting of alternating layers of P-type and N-type material, with a P-type substrate. When a voltage is applied to the base-emitter junction, the minority carriers that are injected into the base region carry current, creating a base-emitter current and subsequently, a collector-emitter current. In other words, the injected electrons from the base region carry current, increasing the transistor’s current gain. The current gain (also known as the collector current amplification factor) of the RN1107CT is typically approximated as 120 at a collector-emitter voltage of 25V.

In addition to its collector-emitter current gain, the RN1107CT also has base-emitter bias voltage that further augments the device’s overall performance. The base-emitter bias voltage provides an initial forward bias that starts the transistor in its active region and reduces the current threshold required to drive the device. This reduced threshold current significantly helps reduce power consumption and the total number of components needed for the transistor circuit.

The RN1107CT is designed for difficult storage and horizontal deflection, requiring high current delivery and very high power efficiency. To achieve this, the device uses a vertical structure that limits on-state resistance and allows wider operating temperature range. It also has an unprecedented level of design flexibility allowing it to be tailored to diverse applications requiring various output power, operating speed and voltage. Furthermore, this structure provides an increased current gain and a more reliable current flow through the device.

The RN1107CT is an important transistor that can be used in various applications. Its multiple terminal design and built-in bias voltage are effective solutions for reducing system power consumption and allows direct-view colour television set designs to become more compact and power efficient. Its vertical PN structure provides high gain, low saturation voltage, and improved uniformity. This transistor is a great choice for horizontal deflection circuits requiring high efficiency and current delivery, and its design flexibility also allows it to be used for other applications.

The specific data is subject to PDF, and the above content is for reference