
Allicdata Part #: | RN1105ACT(TPL3)TR-ND |
Manufacturer Part#: |
RN1105ACT(TPL3) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 0.1W CST3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | CST3 |
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The RN1105ACT(TPL3) is a single, pre-biased, bipolar junction transistor (BJT) integrated circuit. It facilitates high-speed and low power operation. This IC is designed for use in automotive applications and is ideal for power and signal applications. The RN1105ACT(TPL3) provides three complementary outputs with a current gain of 700 in a small 4-pin SOP package.
The RN1105ACT(TPL3) is a pre-biased, single BJT device. This type of device is pre-biased, meaning that a voltage or current is applied to the base (collector-to-base voltage, or base current) before the output is activated. This pre-bias current, or voltage, allows the device to be used for both current and voltage amplification. The pre-bias condition also helps to minimize the power losses that occur when the device is operating in its linear mode.
The RN1105ACT(TPL3) is designed for use in automotive applications. It features low power consumption and high-speed operation, making it well-suited for applications such as engine control, battery monitoring, and other automotive systems. The circuit also offers excellent EMI and ESD protection, which is essential for automotive electronics.
At the heart of the RN1105ACT(TPL3) is its gain stage. The device provides a current gain of 700 in its linear region, making it suitable for applications requiring a large amount of current. The device’s high-speed operation and low power consumption are enabled by its pre-biased operating condition. The device’s low power consumption is further reduced when the output is in saturation, making it suitable for high current applications such as automotive circuitry.
The device is supplied in a 4-pin SOP package, making it small and lightweight. This makes it easy to integrate into existing automotive systems without increasing the size or complexity of the system. The device also provides excellent EMI and ESD protection, making it suitable for a wide range of automotive applications.
In summary, the RN1105ACT(TPL3) is a single, pre-biased, bipolar junction transistor (BJT) integrated circuit. It provides three complementary outputs with a current gain of 700 in a small 4-pin SOP package. It facilitates high-speed and low power operation, and is ideal for applications such as engine control, battery monitoring, and other automotive systems. The device also provides excellent EMI and ESD protection, making it suitable for a wide range of automotive applications.
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