
RN1102T5LFT Discrete Semiconductor Products |
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Allicdata Part #: | RN1102T5LFTTR-ND |
Manufacturer Part#: |
RN1102T5LFT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 0.1W SSM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Base Part Number: | RN110* |
Supplier Device Package: | SSM |
Package / Case: | SC-75, SOT-416 |
Mounting Type: | Surface Mount |
Power - Max: | 100mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Introduction
The RN1102T5LFT is a single, pre-biased, bipolar (BJT) transistor. It is a common type of transistor used in electronics, and it is widely used in a variety of applications. The RN1102T5LFT transistor can be used in electronic circuits to perform a variety of tasks, and it is important to understand its applications and working principle.
Applications
The RN1102T5LFT transistor is used in many applications. One common application is as a switch, where it can be used to control the output of a circuit. It is also used to amplify signals and create logic gates. Other uses include voltage regulation, switching power supplies, and audio amplifiers. It can be used to switch large currents as well as small signals.
The RN1102T5LFT transistor can be used in radio frequency (RF) circuits, either as a switch or an amplifier. It is also used in light emitting diode (LED) drivers and high-speed logic circuits. Finally, it is commonly used as an inverter in logic circuits.
Working Principle
The RN1102T5LFT is a bipolar junction transistor (BJT) that is pre-biased. This means it has two base terminals (B and C) that are connected to two semiconductor layers. The first layer is the emitter (E), which is connected to the positive voltage supply. The second layer is the collector (C), which is connected to the negative voltage supply.
When a current is applied to the base of the transistor, electrons are pulled from the emitter to the base. This creates a voltage drop across the base-collector region, which causes a current to flow from the collector to the emitter. This current can be controlled by varying the base current, which allows the transistor to be used as a switch or an amplifier.
The RN1102T5LFT is also pre-biased, which means that it requires less power to be turned on. This makes it ideal for use in low-power circuits, as well as for controlling large currents.
Conclusion
The RN1102T5LFT is a single, pre-biased, bipolar transistor. It is widely used in a variety of applications, including switches, amplifiers, logic gates, and radio frequency (RF) circuits. It is also pre-biased, which allows it to be used in low-power circuits. Understanding the applications and working principle of this transistor will help you make the most of its features.
The specific data is subject to PDF, and the above content is for reference
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