Allicdata Part #: | RN1113MFVL3F-ND |
Manufacturer Part#: |
RN1113MFV,L3F |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | X34 PB-F VESM TRANSISTOR PD 150M |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1113MFV,L3F Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.01826 |
Series: | -- |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VESM |
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In the world of electronics, transistors can be separated into many different types, each with its own set of application fields and working principles. The RN1113MFV,L3F is a type of transistor that belongs to the category known as Bipolar (BJT) - Single, Pre-Biased. It offers a variety of features and is commonly used for many different applications.
The RN1113MFV,L3F is commonly found in integrated circuits. This is because it is able to work with a power supply ranging from 6V to 17V and has a maximum collector current of 4.2A. As a result, it can be integrated into a variety of electronic circuits, providing useful functionality for many different applications. In addition, the RN1113MFV,L3F is a robust and reliable transistor that is capable of withstanding temperatures of up to 150°C, making it suitable for most electronic applications.
The RN1113MFV,L3F is often used in low voltage amplifiers because of its reliable performance at low power levels. It can be connected with an input signal of 0V or 3V and is able to support an output signal of up to 17V, ensuring reliable performance in all conditions. Furthermore, the low power levels that it can handle also make it suitable for use in battery powered applications where low power is essential.
The RN1113MFV,L3F also features a low input capacitance and a low output resistance, making it very suitable for applications that require high signal fidelity. This is because it is able to maintain signal fidelity even when the signal is travelling through long distances or when there are high levels of signal quality degradation.
In terms of the working principle of the RN1113MFV,L3F, it follows the same basic principles of all transistors. This basically means that it consists of three terminals: Base, Collector, and Emitter. When a current is passed through the Base terminal, it controls the amount of current that passes through the Collector and Emitter terminals. As a result, it can be used to amplify or switch the signal travelling through it. This makes it very versatile, with applications in a variety of electronics.
The RN1113MFV,L3F is a versatile and reliable transistor that can be used in a variety of applications due to its wide range of features. It is capable of providing reliable performance in low voltage amplifiers, can be integrated into integrated circuits, and is also able to amplify or switch the signal travelling through it. Furthermore, its low power and reliable performance make it ideal for use in battery powered applications.
The specific data is subject to PDF, and the above content is for reference
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