RN1108CT(TPL3) Allicdata Electronics

RN1108CT(TPL3) Discrete Semiconductor Products

Allicdata Part #:

RN1108CT(TPL3)TR-ND

Manufacturer Part#:

RN1108CT(TPL3)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.05W CST3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1108CT(TPL3) datasheetRN1108CT(TPL3) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 50mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Description

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RN1108CT(TPL3) is a single pre-biased bipolar transistor. It has many application fields, such as switching and linear power amplifiers for audio, radio, and infrared applications. It is also used for medium and high power levels of application. The device is known for its high current capability, low noise, wide frequency range, and high gain.

The RN1108CT(TPL3) features a maximum collector-emitter voltage of 10V, making it suitable for a wide range of digital and logic circuits. It also has a low reverse leakage current and good gain linearity, making it suitable for various types of circuits. The RN1108CT(TPL3) has a power dissipation of 500mW, making it suitable for high-power applications.

The working principle of the RN1108CT(TPL3) is simple and easy to understand. It is a type of transistor that works by manipulating the movement of electric current between the collector and the emitter. When a small base current is applied to the base terminal, current is allowed to flow from the collector to the emitter, thus providing a power supply for the external circuit that is connected to the transistor.

When the current flow is in the direction of the collector to the emitter, it is known as a forward-biased transistor. On the other hand, when the current flow is in the opposite direction, it is known as a reverse-biased transistor. The RN1108CT(TPL3)has a forward-biased current gain of 30, and a reverse-biased current gain of 10. This makes the RN1108CT(TPL3)highly suitable for applications where high gain is required.

The RN1108CT(TPL3)is also known for its low noise, high frequency response, and power dissipation. It has a frequency response of up to 200MHz, with a low noise figure of 2.2dB, making it suitable for applications where high performance and accuracy are required. Its power dissipation of 500mW makes it suitable for high-power applications.

In conclusion, the RN1108CT(TPL3) is a single pre-biased bipolar transistor that has many application fields, due to its high current capability, low noise, wide frequency range, and high gain. Its working principle is simple and easy to understand, and it has a power dissipation of 500mW, making it suitable for high-power applications.

The specific data is subject to PDF, and the above content is for reference

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