Allicdata Part #: | RN1102ACT(TPL3)TR-ND |
Manufacturer Part#: |
RN1102ACT(TPL3) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN 0.1W CST3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | RN1102ACT(TPL3) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | CST3 |
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The RN1102ACT (TPL3) is a single, pre-biased bipolar junction transistor designed to work in a variety of applications. It is designed to provide reliable operation and superior performance in high-temperature and low-voltage operation. The RN1102ACT (TPL3) is a popular choice for many applications due to its wide operating range and efficient switching capabilities.
The RN1102ACT (TPL3) features a single, pre-bias capability that enables it to be used in a variety of different applications. This type of pre-bias allows the device to remain in high performance mode at all times, regardless of the power supply voltage or the temperature of the environment. This feature allows the RN1102ACT (TPL3) to be used in applications where the power consumption and power loss are critical.
The RN1102ACT (TPL3) has a low base current capability and uses a single collector-emitter voltage. This allows the transistor to have a wide range of collector current and a low base current capability, making it ideal for low power and low voltage applications. The base current also allows the transistor to have a higher switching speed, enabling it to provide higher performance switching.
The RN1102ACT (TPL3) also has a low emitter current and collector current capability which makes it ideal for low power and low voltage applications. This ensures that components directly connected to the transistor are always supplied with the correct voltage and current for optimal performance. The low current capability also allows the device to reduce energy consumption by providing fast switching capabilities.
The RN1102ACT (TPL3) is designed to be used in applications that require high-temperature operation and vibration resistance. Its low thermal resistance allows the transistor to operate in a wide temperature range and still maintain performance. Additionally, it has a high overload protection capability, which protects it from overloads caused by thermal runaway.
The RN1102ACT (TPL3) is an ideal choice for applications where high speed, low power consumption, and high reliability are desired. Its wide operating range and efficient switching capabilities make it suitable for a variety of applications. Additionally, its base current and low collector current capabilities allow the device to provide optimum performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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