RN1103ACT(TPL3) Allicdata Electronics

RN1103ACT(TPL3) Discrete Semiconductor Products

Allicdata Part #:

RN1103ACT(TPL3)TR-ND

Manufacturer Part#:

RN1103ACT(TPL3)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.1W CST3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1103ACT(TPL3) datasheetRN1103ACT(TPL3) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Description

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A RN1103ACT (TPL3) is a single, pre-biased, bipolar junction transistor (BJT). This type of transistor is commonly used for boosting, amplification and sensing applications. The RN1103ACT (TPL3) is particularly useful for applications which require a low power dissipation, high gain and low noise.

A basic BJT has three terminals - the base, the emitter and the collector. The collector is the terminal to which the current flows and the emitter is the source of the current. The base is the control terminal. By applying a voltage to the base, the current flow through the emitter and collector can be controlled.

The RN1103ACT (TPL3) is a pre-biased BJT. This means that the transistor has already been initially biased with a current, allowing it to operate with a minimum of external components. If the BJT is pre-biased, the collector-to-emitter voltage can be reduced to a minimum, allowing for low power dissipation. The pre-biased BJT also has a higher voltage gain than a non-biased BJT.

The RN1103ACT (TPL3) is designed for low noise operation. This is achieved by using a combination of integrated components which minimize the current noise associated with the transistor. The resulting combination of low noise and low power dissipation makes the RN1103ACT (TPL3) an ideal choice for applications such as radiometers and detectors.

The RN1103ACT (TPL3) is also a good choice for amplifiers. Its combination of high gain and low noise makes it particularly useful for amplifying low-level FM signals. Additionally, the RN1103ACT (TPL3) can be used in amplifiers which require a high level of voltage gain while maintaining a low power dissipation.

The RN1103ACT (TPL3) is also useful for sensing applications. Its wide dynamic range and low power dissipation make it an ideal choice for applications such as temperature sensors and smoke detectors. Additionally, the RN1103ACT (TPL3) can be used to detect other types of signals such as pressure, flow and humidity.

The RN1103ACT (TPL3) is a versatile transistor which can be used in a wide range of applications. Its combination of low noise, low power dissipation and high gain makes it an ideal choice for a variety of applications. The RN1103ACT (TPL3) is an invaluable tool for engineers who need an efficient, reliable and cost-effective solution for their electronic equipment.

The specific data is subject to PDF, and the above content is for reference

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