RN1103MFV(TPL3)

Transistors - Bipolar (BJT) - Single, Pre-Biased

RN1103MFV(TPL3) transistor is a single pre-biased bipolar (BJT) transistor, an NPN type with a typical collector-emitter voltage of 40V. This device is employs an NPN process with an emitter-base offset voltage of up to 2.5V, making it suitable for use as a current mirror. Unlike other pre-biased transistors, this design offers a relatively low base current leakage and provides a good gain of around 300.

Application field

The RN1103MFV(TPL3) is designed to be used as a current source or current mirror in a variety of applications, including high-side/low-side current monitoring and controlled current sources. It is also suitable for use in current limiting circuits such as buck regulators and power amplifiers. Other applications include pre-driver stages for large power FETs and for driving high capacitive loads. The RN1103MFV(TPL3) is commonly used in automotive and industrial applications, such as power supplies, motor control circuits, and home appliances.

Working principle

The RN1103MFV(TPL3) transistor works by allowing a small current to flow between the emitter and base. This current is then amplified by the internal gain of the transistor, increasing the current flowing from the collector to the emitter. The internal base-emitter resistor is designed to keep the base voltage at a nominal operating point, even when the collector-emitter voltage is changing. This stability in voltage helps ensure that the current mirror produced by the RN1103MFV(TPL3) has reduced variations in output.

The RN1103MFV(TPL3) transistor\'s pre-biased emitter-base junction proven to be of great use in applications that require stable current mirroring. Due to its low Collector-Emitter voltage, the RN1103MFV(TPL3) can provide improved power efficiency over higher voltage devices, making it suitable for lower power applications as well. The device\'s low junction temperature rating of 150°C also helps to reduce the risk of thermal breakdown.