RN1108(T5L,F,T)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	100mW
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SSM

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Introduction

RN1108 (T5L, F, T) is a type of pre-biased single bipolar transistor that is available in a variety of configurations. It is normally used for voltage amplification, signal processing and switching applications. This paper will discuss the application fields, working principle and some electrical characteristics of the RN1108.

Application Fields

The RN1108 is a useful component in many different types of projects. It is most commonly used for amplification and signal processing requiring high linearity and power efficiency. As such, it is commonly found in audio systems, radio transmitters, audio amplifiers, oscillators, video switching and logic circuits.Its low-noise and high linearity characteristics also make it ideal for applications such as medical imaging and RF communications. Additionally, it is a popular choice for high power applications in automotive systems and industrial applications due to its ability to handle high voltages and currents.

Working Principle

The RN1108 is a pre-biased single bipolar transistor. It uses the principle of Base-Emitter Voltage Biasing to provide a predetermined level of amplification. This type of biasing requires that a forward biased diode be placed between the base and the emitter of the transistor. When a voltage is applied to the base of the transistor, it is amplified by the transistor and the biasing diode restricts the amount of current that can flow through the base-emitter junction. The resulting current is regulated by the diode and is referred to as the base current. This base current helps to determine the conducting level of the transistor and the amount of voltage amplification that will occur.

Electrical Characteristics

The RN1108 has a collector-emitter voltage of -40V and a collector-base voltage of -100V. In addition, it has a collector-emitter current of -5A and a collector-base current of -1A. Furthermore, its power dissipation is rated at 250mW. These electrical characteristics make the RN1108 well-suited for applications where large current and high voltage levels are required.The RN1108 also has a high bandwidth and provides excellent linearity. Its gain-together bandwidth product is greater than 1MHz and its Power Added Efficiency (PAE) is greater than 65%. Additionally, its total harmonic distortion (THD) remains low even when operated at large signal levels.

Conclusion

The RN1108 is a versatile pre-biased single bipolar transistor that is available in a variety of configurations. It is commonly used for voltage amplification in audio systems, radio transmitters, audio amplifiers, oscillators, video switching and logic circuits. It also has a wide range of electrical characteristics, including a collector-emitter voltage of -40V, a collector-base voltage of -100V, a collector-emitter current of -5A, a collector-base current of -1A, and a power dissipation rating of 250mW. Furthermore, its gain-together bandwidth product is greater than 1MHz, its Power Added Efficiency (PAE) is greater than 65%, and its total harmonic distortion (THD) remains low even when operated at large signal levels.

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