| Allicdata Part #: | RN1109ACT(TPL3)TR-ND |
| Manufacturer Part#: |
RN1109ACT(TPL3) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS NPN 0.1W CST3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: | RN1109ACT(TPL3) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 80mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 47 kOhms |
| Resistor - Emitter Base (R2): | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | CST3 |
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RN1109ACT is a single, pre-biased transistor, belonging to Bipolar Junction Transistor (BJT) type. This type of transistor is used in many electronic applications in the modern world, including switching, audio amplifying and sensing circuits. In this article, let\'s discuss the application field and working principle of RN1109ACT(TPL3). It\'s important for its users to understand how it works and how it can be employed effectively in their engineering projects.
Application Field
RN1109ACT can be used in various electronic applications, such as amplifier, signal-switching and detection, power distribution, automotive electronics, etc. It plays an important role in signal detection and active filter circuits like amplifier. The device delivers higher current capabilities and a low-noise operation in signal-switching circuits. The open-collector transistors of this type are making it ideal for power distribution tasks. Finally, the device also provides a beneficial platform for automotive applications.
Working Principle
As mentioned above, RN1109ACT is a type of Bipolar Junction Transistor (BJT) which consists of three layers of semiconductor material such as silicon and germanium. One of the layers is a base that acts as a gate in the transistor. Then there are two other layers, the emitter and the collector. When a small current is applied to the input side of the base, a larger current is allowed to flow through the output side into the collector. This current can then be used for a variety of purposes such as amplifying a signal, regulating power, or switching. Bipolar junction transistors can be either NPN or PNP types, depending on the polarity of the materials in the different layers.In NPN configuration, electrons flow in the conduction region between the base and emitter, while in the PNP configuration, they flow in the opposite direction. RN1109ACT is delivered as a predispersed device and can thus be used as a single transistor without adjustment.
Conclusion
To conclude, RN1109ACT is a type of single, pre-biased bipolar junction transistor (BJT) used in many different applications. It provides a platform for signal switching, current capabilities, low-noise operation, and power distribution. In addition, due to its pre-biased nature, users are able to use the device as a single element for their engineering projects, avoiding extra set up and cost.
The specific data is subject to PDF, and the above content is for reference
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RN1109ACT(TPL3) Datasheet/PDF