RN1118(T5L,F,T)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	100mW
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SSM

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Introduction

The RN1118 is a single, pre-biased bipolar junction transistor (BJT) or commonly referred to as a transistor. This type of transistor is typically used in controlled current, voltage and power applications. This article will discuss the application field and working principle of the RN1118 transistors.

What is a Transistor?

A transistor is an electronic component commonly used for switching and amplifying electronic signals. It is made up of three layers of semiconductors called an emitter, base and collector.

What is the RN1118?

The RN1118 is a single, pre-biased bipolar junction transistor (BJT) designed for use in a wide variety of applications. This type of transistor is designed to provide fast switching times and high power output. It is also designed to be very reliable in operation and has a wide range of operating temperature.

Application Field of RN1118

The RN1118 is commonly used in various industries such as automotive, professional audio and telecommunications. In automotive applications, it is used as a power transistor to switch large currents. It is used in professional audio applications to produce high-power audio signals and in telecommunications to control call switching operations.

Working Principle of RN1118

The RN1118 operates on the principle of majority carrier injection. This type of transistor is pre-biased by injecting holes into the collector region. The holes are injected from the emitter to the collector region through the base. This ensures that the base-emitter junction is forward biased and that the collector-emitter junction is reverse biased.As current flows through the collector region, the holes injected from the emitter are collected at the collector region. This creates a stable current flow between the emitter and the collector. This current is commonly referred to as the “collector current” or “collector current density”.When a voltage is applied to the base, a large number of minority carriers are injected into the region between the emitter and the collector. This increases the collector current and leads to an increase in collector-emitter voltage.

Conclusion

In conclusion, the RN1118 is a single, pre-biased bipolar junction transistor (BJT) designed for use in a wide variety of applications. This type of transistor is designed to provide fast switching times and high power output. Its application field includes automotive, professional audio and telecommunications. The working principle of the RN1118 is based on the majority carrier injection principle and is pre-biased by injecting holes from the emitter to the collector region through the base.

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