| Allicdata Part #: | RN1114(T5LFT)TR-ND |
| Manufacturer Part#: |
RN1114(T5L,F,T) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS NPN 0.1W SSM |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: | RN1114(T5L,F,T) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 1 kOhms |
| Resistor - Emitter Base (R2): | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | 250MHz |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-75, SOT-416 |
| Supplier Device Package: | SSM |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Bipolar junction transistors (BJTs) are an important type of transistor that has been used in a variety of electronic devices for decades. A single, pre-biased bipolar junction transistor, such as the RN1114(T5L,F,T) is commonly found in digital, audio, and instrumentation applications. This article will explain the different applications of the RN1114 transistor, as well as its working principle.
Overview
The RN1114(T5L,F,T) is a single-stage, vertical pre-biased NPN small signal transistor. This transistor has a low cutoff frequency and a high breakdown voltage to minimize distortion and noise. Additionally, this device is designed with a low noise figure to improve the signal-to-noise ratio. It is designed to be used in amplifier circuits in both audio and instrumentation systems, primarily for signal processing and power control.
Applications
The RN1114 is most commonly used in audio systems, where it is used as an amplifier and signal processing device. It can be used to boost and mixing signals, to improve signal-to-noise ratio and reduce distortion. Additionally, it is also commonly used in instrumentation systems, for power control and for signal detection and conditioning. Some other potential applications include medical instrumentation, automotive systems, avionics, and telecommunications.
Working Principle
The working principle of the RN1114 is based on the behavior of semi-conductor materials, such as silicon or germanium. The transistor is composed of three terminals: base, collector, and emitter. When a current is applied to the base terminal, it creates an electrostatic field that causes an inverted current flow from the collector to the emitter. The current flow can be varied depending on the current at the base terminal, thus allowing the transistor to act as either an amplifier or switch.
The impedance of the transistor is determined by the gain of the transistor, which is determined by the current at the base terminal. The current at the base terminal, in turn, is determined by the resistance of the external circuit, allowing the transistor to be used as an analog or digital device. The voltage drop across the collector and emitter is known as the forward voltage drop, and is a constant for a given device.
Advantages
The RN1114 offers a number of advantages, including high breakdown voltage and low noise output, as well as a low cutoff frequency, which makes this device suitable for a wide range of applications. Additionally, this device is small, making it ideal for applications where space is limited. Finally, the low input and output impedance of this device make it more versatile than other transistors.
Conclusion
The RN1114(T5L,F,T) is a single-stage, pre-biased NPN small signal transistor, which is commonly used in audio, instrumentation, and medical applications. This device offers a number of advantages, including high breakdown voltage, low noise output, and low cutoff frequency. The working principle of the device is based on the behavior of semi-conductor materials, and its impedance is determined by the gain of the transistor.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| RN1111ACT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W CS... |
| RN112-0.5-02-18M | Schaffner EM... | 1.23 $ | 498 | CMC 18MH 500MA 2LN TH18mH... |
| RN116-1.3-02-6M8 | Schaffner EM... | 1.46 $ | 495 | CMC 6.8MH 1.3A 2LN TH6.8m... |
| E3RA-RN11 2M | Omron Automa... | 67.19 $ | 5 | PLSTCM18,RETRO3M,RAD,NPN,... |
| RN112-0.6-02 | Schaffner EM... | 0.0 $ | 1000 | CMC 15MH 600MA 2LN TH15mH... |
| RN1111CT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.05W C... |
| RN1104MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | TRANS PREBIAS NPN 0.15W V... |
| RN1113MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN1108CT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.05W C... |
| RN112-2-02-1M8 | Schaffner EM... | 1.23 $ | 2462 | CMC 1.8MH 2A 2LN TH1.8mH ... |
| RN1110CT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.05W C... |
| RN114-2-02-4M2 | Schaffner EM... | 1.25 $ | 1449 | CMC 4.2MH 2A 2LN TH4.2mH ... |
| RN1132MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN1107CT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.05W C... |
| RN1119MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN1114MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN1107,LF(CT | Toshiba Semi... | 0.03 $ | 12000 | TRANS PREBIAS NPN 0.1W SS... |
| RN1105MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | TRANS PREBIAS NPN 0.15W V... |
| RN112-0.8-02 | Schaffner EM... | -- | 1000 | CMC 10MH 800MA 2LN TH10mH... |
| RN1118(T5L,F,T) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W SS... |
| RN1109ACT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W CS... |
| RN112-4-02-0M7 | Schaffner EM... | 1.23 $ | 754 | CMC 700UH 4A 2LN TH700H @... |
| RN113BPC | Switchcraft ... | 3.72 $ | 109 | CONN JACK STEREO 6.35MM R... |
| RN1108(T5L,F,T) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W SS... |
| RN1110ACT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W CS... |
| RN114-1.5-02-6M8 | Schaffner EM... | 1.25 $ | 4557 | CMC 6.8MH 1.5A 2LN TH6.8m... |
| RN1118MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN114-1-02 | Schaffner EM... | 0.0 $ | 1000 | COMMON MODE CHOKE 15MH 1A... |
| RN112APC | Switchcraft ... | 2.67 $ | 3190 | CONN JACK MONO 6.35MM R/A... |
| RN1110(T5L,F,T) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W SS... |
| RN112-0.5-02-15M | Schaffner EM... | 1.23 $ | 474 | CMC 15MH 500MA 2LN TH15mH... |
| RN114-2.5-02-3M3 | Schaffner EM... | 1.25 $ | 1163 | CMC 3.3MH 2.5A 2LN TH3.3m... |
| RN112-2-02 | Schaffner EM... | 1.76 $ | 2691 | CMC 1.8MH 2A 2LN TH1.8mH ... |
| RN1103ACT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W CS... |
| E3FB-RN11 2M | Omron Automa... | 64.61 $ | 8 | SENSOR PHOTO RETRO METAL ... |
| RN114-3-02 | Schaffner EM... | 0.0 $ | 1000 | CMC 2MH 3A 2LN TH2mH @ 10... |
| RN112-0.6-02-15M | Schaffner EM... | 1.23 $ | 1732 | CMC 15MH 600MA 2LN TH15mH... |
| RN114-0.5-02 | Schaffner EM... | 1.97 $ | 1 | CMC 39MH 500MA 2LN TH39mH... |
| RN1103,LF(CT | Toshiba Semi... | 0.03 $ | 3000 | TRANS PREBIAS NPN 0.1W SS... |
| RN1104T5LFT | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS NPN 0.1W SS... |
TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
RN1114(T5L,F,T) Datasheet/PDF