RN1104ACT(TPL3)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	80mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	100mW
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	CST3

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The RN1104ACT (TPL3) is a pre-biased single transistor that is commonly used in many different types of applications. It is a robust and reliable device, making it a great choice for many different applications.The RN1104ACT is a bipolar junction transistor (BJT) that is composed of three different components: the base, the collector, and the emitter. The base is the control element of the transistor, and it serves to regulate the current flow from the collector to the emitter. The collector is the main current conduction path of the transistor, and it can accept large amounts of current from the base. The emitter is the output side of the transistor, and its primary function is to output the current applied to the base.In terms of its application field, the RN1104ACT is commonly used in power supplies, voltage regulators, amplifier circuits, and other audio/video electronics applications. It is also used as a power switch, commonly in small circuits as it is a low power device. The RN1104ACT is capable of operating at very low voltages, making it ideal for use in battery powered devices.The working principle of the RN1104ACT transistor is based on the current-voltage relationship of the device. When a small current is applied to the base, the current flowing between the collector and emitter of the transistor is increased. This increase in current is due to the fact that the transistor\'s base-emitter junction is forward-biased, and thus has a low resistance. The amount of current that flows between the collector and emitter is based on the amount of current applied to the base, and the current gain of the transistor, known as the “beta”. The higher the current applied to the base, the more current will flow through the collector and emitter, and thus the higher the output of the transistor will be.The RN1104ACT transistor has many advantages when compared to other types of transistors. For example, it is much less susceptible to damage from electrostatic discharge than other transistors, and thus is ideal for applications where electrostatic discharge is a concern. It is also a low power consumption device, with typical power dissipation at 1/3 or less that of other transistors, making it ideal for many portable and battery-powered applications.Overall, the RN1104ACT is an excellent pre-biased single transistor that is well-suited for a wide range of applications. Its small size and excellent electrical characteristics make it an ideal choice for many different electronics applications. It is a reliable and robust device, making it a great choice for those who are looking for a reliable and robust transistor for their projects.

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