| Allicdata Part #: | RN1106ACT(TPL3)TR-ND |
| Manufacturer Part#: |
RN1106ACT(TPL3) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS NPN 0.1W CST3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: | RN1106ACT(TPL3) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 80mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 4.7 kOhms |
| Resistor - Emitter Base (R2): | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | CST3 |
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The RN1106ACT (TPL3) is a single pre-biased bipolar junction transistor (BJT), a three-terminal device which switches with an applied voltage between the base and the emitter. It is primarily used as an amplifier and can be used as an oscillator as well. It is composed of a silicon, minor element and a variety of dopants.
The principle of operation for this transistor is based on current flow. The base-emitter junction of the transistor acts as a diode, allowing current to pass from the collector to the emitter when a forward-biased voltage is applied. A control current flows from the base to the emitter to inject minority carriers into the base region. This increases the conduction of current between the collector and the emitter, causing an amplification effect in the output voltage.
This type of transistor is pre-biased, meaning that a small bias current has been introduced between the emitter and base in order to speed up the operation of the transistor. This means that the current and voltage thresholds of the transistor are already established, allowing for faster switching with no need for additional circuitry.
The RN1106ACT (TPL3) is generally used in low voltage, low power applications and is suitable for use in a wide variety of electronic devices such as amplifiers, digital logic and oscillators. The device is also suitable for use in a number of automotive applications, such as radio receivers, LED circuit drivers and ECU interfaces.
It has a low minimum breakdown voltage of 18 volts and a maximum collector current of 10 amps. It is also capable of a relatively fast switching response time, with a turn-off time of less than 5 nanoseconds. This makes it ideal for applications that require fast switching speeds.
In conclusion, the RN1106ACT (TPL3) is a pre-biased, single bipolar junction transistor that can be used in a wide range of applications including amplifiers, logic circuits, oscillators and automotive applications. It has a low voltage threshold, high current capacity and fast response time, making it an ideal choice for a variety of switching applications.
The specific data is subject to PDF, and the above content is for reference
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RN1106ACT(TPL3) Datasheet/PDF