RN1106ACT(TPL3) Allicdata Electronics
Allicdata Part #:

RN1106ACT(TPL3)TR-ND

Manufacturer Part#:

RN1106ACT(TPL3)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS NPN 0.1W CST3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: RN1106ACT(TPL3) datasheetRN1106ACT(TPL3) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Description

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The RN1106ACT (TPL3) is a single pre-biased bipolar junction transistor (BJT), a three-terminal device which switches with an applied voltage between the base and the emitter. It is primarily used as an amplifier and can be used as an oscillator as well. It is composed of a silicon, minor element and a variety of dopants.

The principle of operation for this transistor is based on current flow. The base-emitter junction of the transistor acts as a diode, allowing current to pass from the collector to the emitter when a forward-biased voltage is applied. A control current flows from the base to the emitter to inject minority carriers into the base region. This increases the conduction of current between the collector and the emitter, causing an amplification effect in the output voltage.

This type of transistor is pre-biased, meaning that a small bias current has been introduced between the emitter and base in order to speed up the operation of the transistor. This means that the current and voltage thresholds of the transistor are already established, allowing for faster switching with no need for additional circuitry.

The RN1106ACT (TPL3) is generally used in low voltage, low power applications and is suitable for use in a wide variety of electronic devices such as amplifiers, digital logic and oscillators. The device is also suitable for use in a number of automotive applications, such as radio receivers, LED circuit drivers and ECU interfaces.

It has a low minimum breakdown voltage of 18 volts and a maximum collector current of 10 amps. It is also capable of a relatively fast switching response time, with a turn-off time of less than 5 nanoseconds. This makes it ideal for applications that require fast switching speeds.

In conclusion, the RN1106ACT (TPL3) is a pre-biased, single bipolar junction transistor that can be used in a wide range of applications including amplifiers, logic circuits, oscillators and automotive applications. It has a low voltage threshold, high current capacity and fast response time, making it an ideal choice for a variety of switching applications.

The specific data is subject to PDF, and the above content is for reference

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