RN1109(T5L,F,T) Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	100mW
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SSM

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to the RN1109 (T5L, F, T) Transistor

The RN1109 (T5L,F,T) is a single, pre-biased, bipolar transistor. It is a general-purpose transistor for use in amplification, switching and signal processing applications. It is designed to be used in audio and RF circuits. The RN1109 is capable of handling currents up to 1 A and is capable of operating at temperatures up to 150°C.

Terminology

A transistor is a semiconductor device that is commonly used to amplify, switch and/or process electrical signals. The RN1109 (T5L,F,T) is a bipolar transistor, meaning that it has three terminals that are labeled collector, base, and emitter.TheRN1109 is single, meaning that it is made up of a single layer of semiconductive material. Pre-biased means that the transistor is already biased before it is used in an application and therefore requires less setup time.

Applications of the RN1109 (T5L,F,T)

The RN1109 (T5L,F,T) is commonly used in audio and RF circuits. It is suitable for applications such as high voltage switching, relay driving, solenoid and motor control, dynamic brake circuits, and current sensing. It is also widely used in radio frequency (RF) amplifiers and switches, and in medical instrumentation.

Working Principle of the RN1109 (T5L,F,T)

The RN1109 (T5L,F,T) operates by controlling the flow of current between its collector and emitter. The collector is typically connected to a power supply and the emitter is connected to a load. The base is used to control the amount of current that is allowed to flow through the collector-emitter path. When a small current flows into the base, it creates a large current in the collector-emitter path, allowing more current to flow through the transistor. This current amplification allows the transistor to be used in applications such as amplification, switching, and signal processing.

Conclusion

The RN1109 (T5L,F,T) is a single, pre-biased, bipolar transistor. It is designed for use in audio and RF applications and is capable of handling currents up to 1 A and operating at temperatures up to 150°C. It is commonly used in audio amplifiers, RF switches and medical instrumentation. It operates by controlling the flow of current between its collector and emitter and is capable of providing current amplification.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description