RN1701JE(TE85L,F) Discrete Semiconductor Products

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The RN1701JE(TE85L,F) is a high-performance transistor array with pre-biased ranges designed for digital and analog switching and circuit applications. The device features a wide bandgap, low resistance and high reliability. As an array, there is a single common collector with four connected transistors, also known as a quad. The transistors are packaged in a leaded TO-220AB package.

The RN1701JE(TE85L,F) works with three technologies. First, it is composed of N-channel FETs (field effect transistors). These transistors, also referred to as MOSFETs (metal oxide semiconductor field effect transistors), are voltage-controlled devices. They allow current to flow from their source electrodes to drain electrodes. Additionally, a gate electrode is connected to the transistor’s control voltage line, which can turn the devices on and off.

Second, the RN1701JE(TE85L,F) employs two NPN (Negative Positive Negative) bipolar transistors. Bipolar transistors work by applying an electric field on a junction between two regions of semiconductor material. When the electric field is applied, it diffuses an electron current from one region to the other, creating a current by selectively controlling the voltage. This allows the transistor to function as an amplifier, switching, and inverter.

Third, the RN1701JE(TE85L,F) includes a diode. Diodes are semiconductors that allow current to flow in one direction and not in the opposite direction. The device can be used for several purposes, such as protecting circuits from overloads, forming half-wave rectifier, and operating as switches.

As an array, the RN1701JE(TE85L,F) is useful for a variety of applications. Its pre-biased range allows it to be used in digital and analog circuits. The device is popularly used in digital logic gate applications, due to its low dynamic power consumption. It can also be used as an input to digital or analog actuating valves to control a pneumatic system or in a telecommunication power supply. Furthermore, the device is suitable for use as a power amplifier in a TV or video recorder.

Moreover, the compact size and low power consumption of the RN1701JE(TE85L,F) allows it to easily fit into a variety of circuit configurations. Its ability to handle 50V can make it a useful component in many circuits. Additionally, the high-frequency characteristic of the device make it an excellent option for applications requiring resistance to voltage noise. The device can also be used for motor control, automotive applications, and as a switch in display and LED lighting.

In summary, the RN1701JE(TE85L,F) transistor array was designed for digital and analog circuit applications. Its N-channel FET design, two NPN bipolar transistors and diode provide a wide range of functionality in a simple package. Its pre-biased range and low power consumption make the device suitable for many applications, including digital logic gates, power amplifiers, motor control and automotive applications. Its high-frequency characteristics also makes it well-suited for applications requiring resistance to voltage noise.

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