RN1704JE(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN1704JE(TE85LF)TR-ND |
Manufacturer Part#: |
RN1704JE(TE85L,F) |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2NPN PREBIAS 0.1W ESV |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | RN1704JE(TE85L,F) Datasheet/PDF |
Quantity: | 4000 |
4000 +: | $ 0.05557 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-553 |
Supplier Device Package: | ESV |
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RN1704JE(TE85L,F) Application Field and Working Principle
Bipolar transistors are an essential component of electronics because of its ability to control current and voltage levels via two base terminals. The RN1704JE(TE85L,F) is a particular variety of transistor array which is pre-biased. The use of such transistors make it possible to easily implement logic functions with small size and low power consumption.
The RN1704JE(TE85L,F) is a single-stage transistor array composed of four NPN transistors connected in series. It is designed for both switching and amplification application, and performs comparably to integrated circuits which are far more complex. This transistor array comes pre-biased with an optimized base-emitter voltage of 3V for optimal stability.
This transistor array is commonly used when speed and/or cost efficiency need to be a priority. For example, it can be found in switch mode power supplies, audio amplifier circuits, gate drivers, and reading industrial transducers. These components are more durable than integrated circuits and can easily be substituted when the need arises.
Working Principle
At the heart of transistor operations is the biasing of the base terminal, which can either be a forward biasing or a reverse biasing. A reverse biasing essentially works by pushing the current away from the base while a forward biasing results in the flow of current.
The RN1704JE(TE85L,F) uses a pre-biased configuration, which essentially means that one of the four transistors connected in both the collector and emitter gates will always be turned off. The biasing of the capacitor or thermal sensor within the transistor array helps to modify the gain of the circuit, making the performance of the device more predictable and consistent.
In terms of speed, the pre-biased configuration of the RN1704JE(TE85L,F) makes it one of the fastest single-stage transistor arrays. This allows for instantaneous switching and amplification, both of which are needed for many modern-day applications.
Conclusion
In conclusion, the RN1704JE(TE85L,F) is a pre-biased single-stage transistor array which is perfect for a range of applications. Due to its pre-biasing and advanced construction, the RN1704JE(TE85L,F) can provide consistent and predictable operations, while also boasting high speed performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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RN1704JE(TE85L,F) | Toshiba Semi... | 0.06 $ | 4000 | TRANS 2NPN PREBIAS 0.1W E... |
RN1702JE(TE85L,F) | Toshiba Semi... | 0.06 $ | 4000 | TRANS 2NPN PREBIAS 0.1W E... |
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