RN1703JE(TE85L,F) Allicdata Electronics

RN1703JE(TE85L,F) Discrete Semiconductor Products

Allicdata Part #:

RN1703JE(TE85LF)TR-ND

Manufacturer Part#:

RN1703JE(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2NPN PREBIAS 0.1W ESV
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: RN1703JE(TE85L,F) datasheetRN1703JE(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV
Description

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The RN1703JE (TE85L,F) transistor array is classified under the Transistors – Bipolar (BJT) – Arrays, Pre-Biased category. This type of technology is used in various low power applications, such as amplifiers, motor and motor control, and analog functions. The RN1703JE is unique in that it is a three-bit transistor array, which allows for greater amounts of information to be stored and transmitted, while providing high speed performance.The working principle of the RN1703JE is based on the NPN Transistor Array. It comprises of three separate transistors, each connected to three different collectors. These three transistors can be used together to form a three-bit array, which then acts as a single digital unit. This allows for greater flexibility in terms of the number of data bits and information that can be stored and transmitted. Furthermore, this type of transistor array is pre-biased, thus minimizing the amount of current needed to drive the transistors and resulting in lower power consumption.The RN1703JE has a large variety of applications in a wide range of different fields. In the field of low-power applications, the transistor array is used in amplifiers, motor control, and analog functions. It is also often used in medical imaging, security systems, and electrochemical sensing. Due to its pre-biased design, the RN1703JE can provide accurate data transmission with no distortion, and is capable of operating in thermal imaging systems, as well as in robotic applications.The RN1703JE is also used in automotive and industrial applications, due to its ability to operate in extreme temperatures and difficult environments. The pre-biased transistor array ensures reliable data transmission even in extreme temperatures and difficult conditions. This makes it ideal for applications such as automotive engine control and industrial control systems.The RN1703JE has the ability to operate in a wide range of frequency bands. This allows it to be used in a wide range of different wireless communication systems, such as GSM, CDMA, Wi-Fi, and WiMAX. Furthermore, the transistor array also has a large flexibility in terms of operating voltage and current, and can operate at voltages ranging from 3.3 V to 5.5 V.Overall, the RN1703JE is a three-bit pre-biased transistor array that is used in a variety of applications. Its pre-biased design ensures reliable data transmission even in harsh environments. Furthermore, it is capable of operating in a wide range of frequency bands, allowing it to be used in a variety of wireless communication systems, as well as automotive and industrial control systems. For these reasons, the RN1703JE is a popular choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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