RN1705JE(TE85L,F) Allicdata Electronics

RN1705JE(TE85L,F) Discrete Semiconductor Products

Allicdata Part #:

RN1705JE(TE85LF)TR-ND

Manufacturer Part#:

RN1705JE(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2NPN PREBIAS 0.1W ESV
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: RN1705JE(TE85L,F) datasheetRN1705JE(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV
Description

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The RN1705JE (TE85L,F) is a high-performance, high-reliability, low-cost array of four pre-biased NPN transistors, suitable for a wide range of applications. Each device has its own on-chip resistor bias network and therefore can be used as an “on” or “off-mode” switch, thus allowing the user to choose the most suitable solution for the application. This device also provides superior performance as compared to discrete transistors, due to its superior heat-transfer capabilities, excellent noise immunity, and better ESD protection.

The overall structure of the RN1705JE (TE85L,F) is comprised of four NPN transistors that can be connected either in parallel or in series. It is designed to have a specific assembly of interconnected base, collector and emitter points, so that it acts like a single transistor but with better performance. It also has a built-in thermal protection mechanism, which helps to prevent any thermal damage to the device. This makes the device particularly suited for mission-critical applications.

When considering the working principle of the RN1705JE (TE85L,F) device, it is important to understand that the current flow of an NPN transistor depends on the voltage on its base. The voltage on the base is the input signal to the transistor, and the current bifurcates when the base voltage is changed. It then passes through either the collector or the emitter, depending on the magnitude of the voltage. If the voltage is below the threshold voltage of the transistor, then the device is turned “off”, meaning that no current passes through the transistor. On the other hand, if the voltage is above the threshold voltage, the device is “on” and current will pass through the device. The RN1705JE (TE85L,F) is an NPN array of four transistors already pre-biased, meaning that each transistor will be biased to a specific voltage value.

The RN1705JE (TE85L,F) is ideal for applications that require steady-state accuracy and high input impedance. It is used in a wide range of applications such as test and measurement, audio amplifiers, and switching power supplies. One unique advantage of using this pre-biased array is that it can provide greater flexibility to the user when it comes to choosing specific devices for specific applications. This array of devices gives designers the ability to choose from a wider range of device operating parameters, thus allowing them to optimize the design for their specific applications. This device is also used in applications such as RF power amplifiers, power amplifiers for smartphones, and particle accelerator systems.

In conclusion, the RN1705JE (TE85L,F) is an array of four pre-biased NPN transistors designed to provide superior performance, high-reliability and low-cost. It has low on-resistance, excellent thermal transfer capabilities, excellent ESD protection, and is suitable for many applications. Furthermore, its pre-biased configuration allows designers to customize the behavior of the device for their application, which makes it a great choice for mission-critical applications.

The specific data is subject to PDF, and the above content is for reference

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