RN1702JE(TE85L,F) Discrete Semiconductor Products

The RN1702JE (TE85L,F) is a type of pre-biased transistor array with high gain, low saturation, and excellent collect-emitter characteristics. Specifically, pre-biasing transistor arrays, such as the RN1702JE, can provide increased stability, improved linearity, and reduced input and output power consumption. Unlike in single discrete transistors, pre-biasing integrated transistor arrays can be used to achieve better performance results while using considerably fewer components.

The RN1702JE is a dual low voltage, high precision, pre-biased NPN transistor array. It has a maximum forward emitter current rating of 12mA and a maximum reverse emitter current rating of 20mA. The higher reverse emitter current indicates that the RN1702JE can operate at slightly higher voltages than other comparable pre-biased transistor arrays. The RN1702JE is packaged in a TO-39 package and operates over a temperature range of -25°C to 70°C.

The RN1702JE has a high current gain (hFE) of greater than 200, which is much higher than other pre-biased transistor arrays. The transistors in the array are pre-biased with a voltage source that is external to the transistor array. This can result in a linear transfer function, meaning that the array can be used in applications that require precise control of a varying input signal.

The RN1702JE has excellent colllector-emitter characteristics, meaning that it is capable of providing excellent voltage regulation and low signal-to-noise ratios. This makes it suitable for a variety of signal processing and control applications. The RN1702JE is also capable of very low quiescent current operation and low power start-up current, which makes it ideal for battery-powered applications where power consumption must be minimized.

The RN1702JE can also be used in high power applications as it has an input/output voltage rating of 20V and an extremely low saturation voltage of 0.1V, meaning that it can handle large input and output voltages. The RN1702JE also has a very low reverse recovery time, allowing it to switch quickly and efficiently.

The RN1702JE is ideal for a wide range of applications, including signal processing, instrumentation and control, battery-powered systems, power management, and motor control. The array\'s low-power and low-saturation characteristics make it ideal for use in microcontroller and microprocessor-based applications. In addition, the RN1702JE has excellent reverse emitter current characteristics, making it well-suited for use in high-voltage and/or high-current applications.