Allicdata Part #: | RN2110MFVL3F-ND |
Manufacturer Part#: |
RN2110MFV,L3F |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | X34 PB-F VESM TRANSISTOR PD 150M |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | RN2110MFV,L3F Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.01985 |
Series: | -- |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VESM |
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The RN2110MFV,L3F is classified as a type of transistor which is both bipolar and single. It is also a pre-biased transistor, meaning it inherently has some type of bias voltage or current applied before operation. This type of transistor is a three-terminal device consisting of a single p-n junction that is able to control the current flow between its collector and its emitter. This makes it a great choice for controlling high-frequency circuits.
The RN2110MFV,L3F has many different application fields due to its inherent properties. These fields include high-frequency amplifier circuits, switching circuits, and voltage-regulating circuits. The latter two are particularly useful for low-power radio frequency transmission applications, such as mobile phones. In addition, the handling of high-frequency signals and signals with shorter pulsewidths is possible thanks to the fast switching speed of the RN2110MFV.
Due to its pre-biased nature, the RN2110MFV,L3F works in a very specific way. It is reactive in nature, meaning that external factors such as temperature and current can affect the transistor’s performance. This is because the pre-bias voltage applied to the device is affected by the ambient temperature or the current running through it. This nature of the device means that it is able to quickly switch on and off when the external factors change, making it an ideal choice for both low-power and high-power applications.
The RN2110MFV,L3F is also extremely reliable, having a long life-time of up to 10 years. This is achieved by its highly efficient components, and its low-power consumption. In addition, the device has a very low voltage rating, meaning that it operates best at voltages below 10 volts.
The RN2110MFV,L3F is a uniquely designed transistor which is well suited to both high-frequency and low-voltage applications. It has a wide range of potential applications, and it is reliable and efficient, thanks to its pre-biased nature. As well as this, the device is able to quickly switch on and off when the external factors change, and enjoy a long service life.
The specific data is subject to PDF, and the above content is for reference
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