RN2110CT(TPL3) Allicdata Electronics
Allicdata Part #:

RN2110CT(TPL3)TR-ND

Manufacturer Part#:

RN2110CT(TPL3)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS PNP 0.05W CST3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: RN2110CT(TPL3) datasheetRN2110CT(TPL3) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 50mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Description

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RN2110CT (TPL3) is a pre-biased single bipolar transistor (BJT) commonly used in wireless technology such as radio frequencies (RF). It is a low-power device that is capable of operating at higher frequencies and has a low noise level. The RN2110CT (TPL3) is manufactured by the transistor manufacturer ROHM.

The RN2110CT (TPL3) is a pre-biased transistor that is specifically used in radio frequency (RF) applications. It is a low-power device and has a low-noise figure, making it ideal for use in wireless communication systems. The device has an on-state current in excess of 4 mA, which allows for higher power efficiency in these applications. The device also features a high breakdown voltage compared to other BJTs, making it suitable for high power applications. It has a wide operating temperature range (-55°C to +125°C) and can tolerate high levels of vibration and shock.

The working principle of the RN2110CT (TPL3) involves the use of two transistors connected in series. One transistor acts as the main "on" transistor and the other acts as the "off" transistor. The main \'on\' transistor is always on and the \'off\' transistor is only activated when an external signal is applied. The device is biased in a pre-determined manner so that the \'on\' transistor requires less power to achieve its threshold voltage. This results in a low-power consumption device, which makes it ideal for use in mobile applications that require long battery life.

The RN2110CT (TPL3) is commonly used in wireless technology such as electronic passports, RFID chips, and other electronic devices. Its low-power and low-noise characteristics make it an ideal choice for these types of applications. It can also be used in other applications that require low-power and low-noise components. These applications include medical devices, automotive engines, and computer-controlled systems.

In conclusion, the RN2110CT (TPL3) is a pre-biased single bipolar transistor (BJT) that has a wide range of applications in wireless communication systems and other electronic devices. Its low-power and low-noise characteristics make it an ideal choice for mobile and other applications that require long battery life. Moreover, its high breakdown voltage makes it suitable for high power applications, making it a great solution for various applications.

The specific data is subject to PDF, and the above content is for reference

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