Allicdata Part #: | RN2115LF(CBTR-ND |
Manufacturer Part#: |
RN2115,LF(CB |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS PNP 50V 0.1W SSM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | RN2115,LF(CB Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02282 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SSM |
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The RN2115 LF (CB application field and working principle) is an advanced transistor device. It is classified as a single, pre-biased bipolar transistor (BJT). It is a great device for use in low-frequency sound applications, and it can also be used in other low-power applications, including bypassing and level shifting.
The RN2115 is a high performance, advanced transistor with a built-in bias. It has a quiescent collector current of 10 mA to 16 mA, and a voltage headroom across its collector-base junction of 5.5 V to 8.5 V. This makes it suitable for a wide range of low-frequency applications, such as bypassing, level shifting, and active filtering. The RN2115 also features very low noise and very low distortion, making it an excellent choice for sound applications.
The working principle of the RN2115 LF (CB) device is based on bipolar junction transistor (BJT) technology. This type of technology uses two PN junctions to control the current flow between the collector and the base of the transistor. The PN junctions are formed from two different types of silicon, which are an n-type and a p-type. In the case of the RN2115, the n-type is the base and the p-type is the collector.
The base current of the RN2115 is controlled by the voltage voltage headroom, which is the difference between the collector-base voltage and the base-emitter voltage. When the voltage headroom is increased, the base current increases and the collector-base voltage decreases. When the voltage headroom is decreased, the base current decreases and the collector-base voltage increases. Therefore, by controlling the voltage headroom, the RN2115 can be used in applications such as bypassing, and level shifting.
When the RN2115 is used in sound applications, it is important to ensure that the device is operated in its linear zone, which is defined by the base current and the collector-base voltage. When the RN2115 is operated in its linear zone, it produces minimal distortion and noise. The linear zone can be determined by measuring the base current and the collector-base voltage, and by plotting them on a graph. This graph, when drawn, is known as the “linearity plot” of the RN2115.
The RN2115 LF (CB) device is an excellent choice for a variety of low-frequency sound applications. Its low noise and distortion, combined with its wide voltage headroom, make it an excellent choice for bypassing, level shifting, and active filtering applications. The RN2115’s linearity plot can then be used to ensure that it is operated in its linear zone and produce minimal distortion and noise.
The specific data is subject to PDF, and the above content is for reference
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