RN2107CT(TPL3) Allicdata Electronics
Allicdata Part #:

RN2107CT(TPL3)TR-ND

Manufacturer Part#:

RN2107CT(TPL3)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS PNP 0.05W CST3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: RN2107CT(TPL3) datasheetRN2107CT(TPL3) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 50mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Description

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The RN2107CT Pre-biased Bipolar Junction Transistor (BJT) is a single device that offers a number of useful applications. Pre-biased BJTs typically offer a much faster response time and lower input capacitance than their non-biased counterparts.

RN2107CT is a PNP device, with its emitter connected to the base and the collector to ground. The primary purpose of this device is to provide a gain in current amplification through its collector current. The device has a high current gain, high frequency switch, low input capacitance and high breakdown voltage. The device is also able to withstand high voltages, making it suitable for use in automotive, medical, industrial and military applications.

The working principle of the RN2107CT is based on the action of two currents: the base current and the collector current. The base current is the current that flows from the base to the emitter and is controlled by the base-emitter voltage (VBE). The collector current is the current that flows from the collector to the emitter and is controlled by the collector-emitter voltage (VCE).

When the base-emitter voltage is increased, the base current increases, and this, in turn, causes the collector current to increase. This causes a gain in current amplification, because the current through the collector is now larger than the current through the base. This is known as a current gain. The RN2107CT can also be used to provide voltage gain, by controlling the base current. This can be done by connecting the base to a voltage source, and then adjusting the voltage to adjust the current.

The device can also be used as a switching device. When the base-emitter voltage is decreased, the device switches off, allowing no current to flow through the collector. This mode of operation is referred to as cutoff. When the base-emitter voltage is increased, the device switches on, allowing current to flow from the collector to the emitter. This is called saturation. The RN2107CT is also able to provide voltage regulation and power supply noise immunity.

In summary, the RN2107CT is a single PNP pre-biased Bipolar Junction Transistor (BJT) offering a number of useful applications. It has a high current gain with low input capacitance and a high breakdown voltage. It is suitable for use as an amplifier or a switch, or for providing voltage regulation and power supply noise immunity in automotive, medical, industrial and military applications. It is also an effective device for providing current gain, and can be used to provide voltage gain by controlling the base current. In short, it provides a fast response time and low capacitance, making it a valuable component in numerous electronic applications.

The specific data is subject to PDF, and the above content is for reference

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