RN2113ACT(TPL3) Discrete Semiconductor Products |
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| Allicdata Part #: | RN2113ACT(TPL3)TR-ND |
| Manufacturer Part#: |
RN2113ACT(TPL3) |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS PNP 0.1W CST3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: | RN2113ACT(TPL3) Datasheet/PDF |
| Quantity: | 10000 |
| 10000 +: | $ 0.03281 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 80mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | CST3 |
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The transistors of the RN2113ACT (TPL3) family belong to the single, pre-biased bipolar junction transistor (BJT) category. These transistors are functionally reliable and have the ability to protect the device from fault conditions, such as short-circuits, overloads, etc. In addition, these transistors come with integrated circuitry for load protection, over-current, over-voltage and overtemperature protection.
The RN2113ACT (TPL3) family consists of NPN and PNP transistors that are pre-biased in either forward or reverse directions. These transistors are well equipped for applications such as load switches, micro-controller (MCU) controlled power supplies, current limiters, peak detector and voltage regulator circuits. These transistors have high gains, making them ideal for use in high performance circuits. Furthermore, these transistors can operate at high currents without any significant degradation in their over-voltage or overtemperature protection characteristics.
The working principle of the RN2113ACT (TPL3) transistors lies in the fact that they are designed to operate by utilizing the properties of a BJT. A BJT is made up of three regions: emitter, collector and base. Each region of the BJT has a voltage or current source connected to it. When a voltage is applied to the base region, current flows from the emitter to the collector. The voltage across the collector-emitter junction determines the amount of current that flows from the emitter to the collector. The transistor then amplifies the current supplied to the base, thus regulating the current in the collector-emitter circuit.
The RN2113ACT (TPL3) transistors have an internal voltage regulator that can detect the voltage across the collector-emitter junction and provide protection if the voltage decreases below the safe levels. This internal regulator ensures that the transistors are protected from any fault condition, thereby avoiding any damage to the device. The reverse-biased transistors ensure that the current flows in the reverse direction, further meaning that any short-circuits or overloads are prevented from causing damage to the device.
In addition to the voltage regulator, the RN2113ACT (TPL3) transistors also feature a built-in over-current and over-voltage protection. If a current overload or an excessive voltage is detected, the transistor will shut down, thereby preventing any damage to the device. The transistors also come with a built-in temperature sensor that helps to reduce the risk of damage by monitoring the temperature of the device.
Finally, the RN2113ACT (TPL3) transistors are available in a variety of packages, allowing them to be used in smaller form-factor applications. These transistors have been designed to meet the highest requirements for quality and performance and are guaranteed to provide the highest level of reliability and protection in various industrial, consumer and medical applications.
The specific data is subject to PDF, and the above content is for reference
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RN2113ACT(TPL3) Datasheet/PDF