RN2109ACT(TPL3) Discrete Semiconductor Products |
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| Allicdata Part #: | RN2109ACT(TPL3)TR-ND |
| Manufacturer Part#: |
RN2109ACT(TPL3) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS PNP 0.1W CST3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: |  RN2109ACT(TPL3) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 80mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 47 kOhms |
| Resistor - Emitter Base (R2): | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | CST3 |
Description
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The RN2109ACT(TPL3) is a single pre-biased transistor, which is a part of a larger family of bipolar junction transistors (BJT). This type of transistor has two terminals, a base and a collector, that are connected in a V-shaped configuration and are connected to another third terminal, the emitter, at the bottom of the V. A small amount of current passing through the base is used to control the larger current flow between the collector and emitter. This type of transistor is commonly used in circuits to amplifying or switching signals due to its diverse capabilities, such as being able to accurately control the flow of current, and being able to handle high frequency signals.The RN2109ACT(TPL3) transistor is ideal for applications where speed and high-frequency performance are necessary, such as in sampling, analog-to-digital converter, and communication applications. This is due to its high frequency cutoff (up to 400MHz) and fast switching speed (up to 1nsec), which allows it to quickly and accurately convert analog signals into digital. In addition to its speed and frequency performance, it also has high breakdown voltage, high forward current gain, low saturation voltage, and low power dissipation. The RN2109ACT(TPL3) transistor is pre-biased, meaning it has a fixed bias current that is introduced into the circuit, allowing signals to be tracked or sampled with accuracy and stability. This is accomplished by precisely selecting the collector-emitter bias voltage, ensuring that the transistor maintains an optimal operating point, where the current gain and the characteristics of the transistor are constant. This feature makes the RN2109ACT(TPL3) ideal for applications that require a wide bandwidth, such as sampling and tracking.In addition to its performance benefits, the RN2109ACT(TPL3) is also very reliable and cost-effective, with a low total cost of ownership making it an ideal solution for any budget conscious system design. It also features an integrated temperature sensor which allows it to operate within specified temperature limits, ensuring that the device does not fail in harsh environmental conditions.Overall, the RN2109ACT(TPL3) is an ideal single pre-biased transistor for applications that require high-frequency performance, high breakdown voltage, and low power consumption. It is also cost-effective and reliable, making it perfect for budget-conscious designs where performance and reliability are of utmost importance.
The specific data is subject to PDF, and the above content is for reference
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