Allicdata Part #: | RN2104MFVL3F-ND |
Manufacturer Part#: |
RN2104MFV,L3F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS PNP 50V 500NA VESM |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | RN2104MFV,L3F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VESM |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The RN2104MFV,L3F is a type of single, pre-biased BJT (bipolar junction transistor). This device is able to provide an ideal combination of performance and functionality within many market applications. Due to its large current gain and robust design, the RN2104MFV,L3F provides an unmatched degree of reliability.
Application Fields
The RN2104MFV,L3F is designed to meet the demanding requirements of a number of different application fields. One of the major uses of this device is within the automotive sector. Its advanced design enables the device to be used in the most demanding environment and applications, including engine control systems, airbag systems and electronic control units.
Another key application field for the RN2104MFV,L3F is within the field of industrial electronics. Due to its robust design and high-gain current, the RN2104MFV,L3F is suitable for use in medical imaging systems, laser printers and automated machines. Furthermore, its advanced design enables the device to work within harsh temperatures, vapors, dust and other environmental conditions.
The RN2104MFV,L3F also finds use within domestic electronic equipment. Its low power consumption and good noise performance makes it ideal for use within amplifiers, receivers and other audio and video products. The device is also used in car audio systems and is typically used alongside other devices such as MOSFETs and FETs.
Working Principle
The RN2104MFV,L3F works according to the principles of BJT (Bipolar Junction Transistor). Just like any other BJT, the device consists of two N-type materials and one P-type material. Due to this configuration, the device is able to provide excellent current gain and also superior noise immunity.
The RN2104MFV,L3F also features a pre-biased configuration. This feature enables the device to obtain a stable state of operation and maintain the highly efficient quiescent current that is expected out of a pre-biased BJT. Due to the combination of an efficient quiescent current and superior current gain, the device provides excellent performance and reliability even in the most demanding operating conditions.
Conclusion
In conclusion, the RN2104MFV,L3F is a single, pre-biased BJT that is designed to meet the expectations of many different applications. Due to its robust design, the device is able to work in the most demanding conditions and still provide excellent current gain and reliability. As such, the device is suitable for use within the automotive, industrial and domestic sector and is expected to become a popular choice among engineers.
The specific data is subject to PDF, and the above content is for reference
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