RN2102ACT(TPL3) Allicdata Electronics
Allicdata Part #:

RN2102ACT(TPL3)TR-ND

Manufacturer Part#:

RN2102ACT(TPL3)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS PNP 0.1W CST3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: RN2102ACT(TPL3) datasheetRN2102ACT(TPL3) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RN2102ACT (TPL3) is a single, pre-biased transistor in the “Bipolar Junction Transistor” (BJT) family of transistors. It is designed to provide a low-impedance output with guaranteed input-to-output matching. The transistor has a base-emitter voltage of 4.5 V, a total supply voltage of 8 V, a total current gain of 1000, and an output voltage of 150 mV. It is capable of operating up to a frequency of 200 MHz.

The RN2102ACT has two significant advantages over other BJT transistors; firstly, it has a low junction capacitance which allows it to operate in a wide frequency range and secondly, its pre-biased characteristic enables it to reach instantaneous stability at high frequencies. The pre-biased gate means that the gate voltage is applied to the transistor from start-up, resulting in an extremely low time of reaching full stability.

The RN2102ACT is a versatile transistor and has a wide variety of applications. The most common applications include RF and mixed-signal amplification, frequency selection, motor-control, and power conversion. Its pre-biased characteristic also makes it well suited for applications where high frequency stability and speed are paramount, such as communications applications, video and audio applications, and mobile computing applications.

The RN2102ACT is also well suited for a range of power conversion applications due to its high current gain, low power consumption, and low junction capacitance. Its pre-biased characteristic ensures that it can respond quickly to changes in the power supply voltage. Furthermore, the pre-bias also minimizes switching losses, resulting in high efficiency and reduced energy costs.

In terms of its working principle, the RN2102ACT uses the basic components of a BJT, including the collector, base, and emitter. When an input signal is applied to the base of the transistor, a small current passes through the collector-emitter junction. This current is amplified by the current gain of the transistor, resulting in an output signal at the collector. The transistor can also be used as an amplifier depending on the type of connections, allowing for more complex circuits.

In summary, the RN2102ACT (TPL3) is a single, pre-biased transistor in the BJT family which has a wide variety of applications. Its low junction capacitance and pre-biased characteristic make it well suited for high frequency and power conversion applications, while its moderate current gain and low power consumption make it suitable for general purpose transistor circuits. This makes the RN2102ACT an ideal choice for applications where frequency stability and speed are important.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RN21" Included word is 40
Part Number Manufacturer Price Quantity Description
RN218-1-02-22M Schaffner EM... 1.46 $ 500 CMC 22MH 1A 2LN TH22mH @ ...
RN214-0.3-02 Schaffner EM... 1.97 $ 144 CMC 47MH 300MA 2LN TH47mH...
RN2114MFV,L3F Toshiba Semi... 0.02 $ 1000 X34 PB-F VESM TRANSISTOR ...
RN214-2-02-2M2 Schaffner EM... 1.25 $ 459 CMC 2.2MH 2A 2LN TH2.2mH ...
RN214-1.5-02 Schaffner EM... 1.87 $ 900 CMC 6.8MH 1.5A 2LN TH6.8m...
RN2112,LF(CT Toshiba Semi... 0.03 $ 3000 TRANS PREBIAS PNP 50V 0.1...
RN2112CT(TPL3) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.05W C...
RN2101ACT(TPL3) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.1W CS...
RN2111CT(TPL3) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.05W C...
RN216-1-02-10M Schaffner EM... 1.5 $ 481 CMC 10MH 1A 2LN TH10mH @ ...
RN2117MFV,L3F Toshiba Semi... 0.02 $ 1000 X34 PB-F VESM TRANSISTOR ...
RN2106CT(TPL3) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.05W C...
RN2104MFV,L3F Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 50V 500...
RN2103MFV,L3F Toshiba Semi... 0.0 $ 1000 X34 PB-F VESM TRANSISTOR ...
RN212-0.4-02 Schaffner EM... 0.0 $ 1000 CMC 39MH 400MA 2LN TH39mH...
RN2115MFV,L3F Toshiba Semi... 0.02 $ 1000 X34 PB-F VESM TRANSISTOR ...
RN2130MFV,L3F Toshiba Semi... 0.02 $ 1000 X34 PB-F VESM TRANSISTOR ...
RN2107CT(TPL3) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.05W C...
RN212-3.6-02-0M4 Schaffner EM... 1.23 $ 491 CMC 400UH 3.6A 2LN TH400H...
RN216-0.5-02-27M Schaffner EM... 1.5 $ 500 CMC 27MH 500MA 2LN TH27mH...
RN214-0.3-02-47M Schaffner EM... 1.25 $ 473 CMC 47MH 300MA 2LN TH47mH...
RN2101,LF(CT Toshiba Semi... 0.03 $ 6000 TRANS PREBIAS PNP 0.1W SS...
RN212-0.8-02 Schaffner EM... 0.0 $ 1000 CMC 10MH 800MA 2LN TH10mH...
RN2109ACT(TPL3) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.1W CS...
RN2115,LF(CB Toshiba Semi... 0.03 $ 1000 TRANS PREBIAS PNP 50V 0.1...
E3FB-RN21 Omron Automa... 64.61 $ 5 SENSOR PHOTO RETRO METAL ...
RN214-0.5-02-56 Schaffner EM... 0.0 $ 1000 COMMON MODE CHOKE 56MH 50...
RN21-I/RM Microchip Te... 0.0 $ 1000 RF TXRX MODULE BLUETOOTH
RN2110MFV,L3F Toshiba Semi... 0.02 $ 1000 X34 PB-F VESM TRANSISTOR ...
RN218-1.1-02-15M Schaffner EM... 1.46 $ 500 CMC 15MH 1.1A 2LN TH15mH ...
RN2111MFV,L3F Toshiba Semi... 0.02 $ 1000 X34 PB-F VESM TRANSISTOR ...
RN212-1.2-02 Schaffner EM... 0.0 $ 1000 CMC 6.8MH 1.2A 2LN TH6.8m...
RN2113ACT(TPL3) Toshiba Semi... 0.04 $ 10000 TRANS PREBIAS PNP 0.1W CS...
RN2105ACT(TPL3) Toshiba Semi... 0.04 $ 10000 TRANS PREBIAS PNP 0.1W CS...
RN216-0.8-02-27M Schaffner EM... 1.5 $ 495 CMC 27MH 800MA 2LN TH27mH...
RN2110CT(TPL3) Toshiba Semi... 0.0 $ 1000 TRANS PREBIAS PNP 0.05W C...
RN212-0.5-02-27M Schaffner EM... 1.23 $ 515 CMC 27MH 500MA 2LN TH27mH...
RN212-1.5-02 Schaffner EM... 0.0 $ 1000 CMC 3.3MH 1.5A 2LN TH3.3m...
RN214-1.2-02 Schaffner EM... 0.0 $ 1000 CMC 10MH 1.2A 2LN TH10mH ...
RN214-2-02 Schaffner EM... 0.0 $ 1000 CMC 4.2MH 2A 2LN TH4.2mH ...
Latest Products
PDTD113EK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD113EK,115 Allicdata Electronics
PDTC144WS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTC144WS,126 Allicdata Electronics
PDTD123YS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123YS,126 Allicdata Electronics
PDTD123TS,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123TS,126 Allicdata Electronics
PDTD123TK,115

TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...

PDTD123TK,115 Allicdata Electronics
PDTD123ES,126

TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...

PDTD123ES,126 Allicdata Electronics