RN2108CT(TPL3) Allicdata Electronics

RN2108CT(TPL3) Discrete Semiconductor Products

Allicdata Part #:

RN2108CT(TPL3)TR-ND

Manufacturer Part#:

RN2108CT(TPL3)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS PNP 0.05W CST3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: RN2108CT(TPL3) datasheetRN2108CT(TPL3) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 50mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Description

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The RN2108CT(TPL3) is a single pre-biased bipolar junction transistor (BJT). It is also known as an E-mode pre-biased BJT as it provides an electrical mode of biasing a dry transistor. This type of biasing has a number of advantages over other types of biasing, including a reduction of power dissipation and higher stability than other biasing modes.

The RN2108CT(TPL3) has a low cost and small DC current gain (beta), making it ideal for low-power switching applications. The low beta makes it well-suited for applications where there is a low-level trigger signal. The low current gain also makes it possible to switch large currents with a small input signal.

The RN2108CT(TPL3) is manufactured in an open-emitter configuration. This allows the device to be used as a button or switch, with a low-level input signal causing current to flow from the collector to the emitter. The open-emitter configuration also enables the use of additional circuitry, such as an additional load or a buffer, if desired.

The RN2108CT(TPL3) typically has a base pin on the collector, to which a bias voltage is applied. This bias voltage (Vb) is generally equal to the rated breakdown voltage of the device and is used to establish the base-emitter voltage, which sets the current gain of the transistor. The bias voltage also determines the transistor\'s collector-emitter breakdown voltage, which determines the maximum current that can be switched by the device.

One of the main advantages of pre-biasing a BJT is the reduction of power dissipation. This is due to the ability of the field-effect transistor (FET) to act as an impedance matching element, reducing the amount of power required to turn on and off the device. The amount of power required to pre-bias the BJT is small compared to the power savings achieved from the lower power dissipation.

The RN2108CT(TPL3) is commonly used for switching low-level signals in operational and amplifier circuits. For example, it is often used as a switch for audio signals and small DC signals. It can also be used as a driver for more complex circuits, such as power amplifier circuits. The pre-biased circuitry also allows the use of a totem pole configuration, which allows two separate transistor outputs to be directed in opposite directions. This makes it ideal for applications that require logic level signals, such as motor control.

The RN2108CT(TPL3) also has a number of safety features. Its high current rating ensures that it is suitable for use in low-noise, high-speed circuits. Its flat surface mount profile also allows for a high thermal conductivity, ensuring that the device does not overheat in operation. The RN2108CT(TPL3) is also RoHS compliant and UL approved.

In conclusion, the RN2108CT(TPL3) is a low-cost, pre-biased BJT that is ideal for low-power switching applications. It is capable of providing a low-level trigger signal and offers reduced power dissipation and improved stability over other types of biasing. Additionally, its open emitter configuration makes it suitable for more complex circuits, while its high current rating and RoHS compliance make it a safe and reliable device for any number of applications.

The specific data is subject to PDF, and the above content is for reference

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