RN2101CT(TPL3) Allicdata Electronics

RN2101CT(TPL3) Discrete Semiconductor Products

Allicdata Part #:

RN2101CT(TPL3)TR-ND

Manufacturer Part#:

RN2101CT(TPL3)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS PNP 0.05W CST3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: RN2101CT(TPL3) datasheetRN2101CT(TPL3) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 50mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Description

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NP2101CT (TPL3) transistor is usually classified as a single, pre-biased bipolar junction transistor (BJT). It was designed and manufactured by NXP Semiconductors. It is usually used in small form factor packages that require low power dissipation, such as low voltage operational amplifiers or high-speed logic circuits.

The typical application fields of the NP2101CT (TPl3) include (but are not limited to):

  • Voltage Regulation
  • Power Management
  • Motor Control
  • Switch Mode Power Supplies (SMPS)

It is usually used as a pre-biased transistor with a fixed ratio of collector-emitter voltage to base current, which allows the transistor to operate with a reduced amount of bias current. This reduces the amount of power dissipated in the transistor, thus helping reduce heat dissipation. As a result, the characteristics of the transistor remain stable even in high-efficiency applications.

The base-emitter circuit of an NP2101CT (TPL3) is connected to a resistor-capacitor (RC) filter. This filter is used to stabilize the collector-emitter voltage. It also limits the current flowing into the base terminal, thus ensuring low power dissipation. The capacitor connected to the base terminal slows down the switching time, thus increasing the overall efficiency of the transistor.

The collector current of the NP2101CT (TPL3) is proportional to the voltage on the base terminal, which is also called the “base drive”. The base drive is usually generated by an external driver circuit. The external driver circuit must be able to provide the required current to the base terminal based on the voltage threshold value set in the device. This voltage threshold value is usually set between 4 to 10 volts.

With a very low saturation voltage and a high switching speed, the NP2101CT (TPL3) provides excellent performance. It has a maximum current gain of 3.2 kA/V, a maximum collector current of 800 mA, and a maximum collector-emitter voltage of 25 V. These characteristics make it well-suited for a wide variety of applications, such as switching applications, drive circuits and low power amplification.

In summary, NP2101CT (TPL3) is typically used as a pre-biased single transistor for voltage regulation, power management, motor control, and switch mode power supplies. It has a low saturation voltage, a high switching speed, a maximum current gain of 3.2 kA/V, a maximum collector current of 800 mA, and a maximum collector-emitter voltage of 25 V, which makes it ideal for a wide range of applications. Its base-emitter circuit is connected to a resistor-capacitor (RC) filter, which stabilizes the collector-emitter voltage and limits the current flowing into the base terminal, helping reduce power dissipation in the device.

The specific data is subject to PDF, and the above content is for reference

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