RN2112ACT(TPL3) Allicdata Electronics
Allicdata Part #:

RN2112ACT(TPL3)TR-ND

Manufacturer Part#:

RN2112ACT(TPL3)

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS PNP 0.1W CST3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: RN2112ACT(TPL3) datasheetRN2112ACT(TPL3) Datasheet/PDF
Quantity: 10000
10000 +: $ 0.03281
Stock 10000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3
Description

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The RN2112ACT (TPL3) is a single, pre-biased transistor in the bipolar junction transistor (BJT) family. It is a small-signal NPN switch-mode transistor which has been specially designed and developed to operate at an extremely high frequency. It features a low operating current, wide bandwidth, low distortion and excellent switching characteristics. This technology offers an ideal solution for switching systems, power amplifiers and power converters.

The RN2112ACT is designed to operate at an output voltage of up to 37V and a drain current of up to 100mA. It has a threshold voltage of 0.4V and a maximum operating frequency of 5MHz. In order to achieve the required performance, the device has built-in bias components such as the base resistor, base voltage divider and collector feedback elements. The base resistor and base voltage divider ensure that the transistor is properly biased and the collector feedback elements ensure that the output voltage is maintained within the acceptable range.

The device has an on-state resistance of 2.6Ω and an off-state resistance of 28.5Ω. It also has a very low input capacitance of 4.3pF, making it an excellent choice for high-speed switching applications. The addition of the built-in bias components also makes this device ideal for applications which require accurate and stable temperatures.

The RN2112ACT can also be used as a voltage amplifier as it has a very high gain-bandwidth product of 8.2V/MHz. It is also suitable for use in oscillator and digital circuits due to its very low input capacitance. Additionally, the device has a very low reverse leakage current of 1μA, which makes it an ideal choice for high-current applications.

Overall, the RN2112ACT is an ideal choice for applications which require high performance and reliability. Its built-in bias components, wide bandwidth, low operating current, low input capacitance and excellent switching characteristics make it an ideal solution for switching systems, power amplifiers and power converters. Its very high gain-bandwidth product, low reverse leakage current and low on-state resistance also make it an excellent choice for voltage amplification, oscillator and digital circuits.

The specific data is subject to PDF, and the above content is for reference

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