
Allicdata Part #: | RN2112ACT(TPL3)TR-ND |
Manufacturer Part#: |
RN2112ACT(TPL3) |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS PNP 0.1W CST3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 10000 |
10000 +: | $ 0.03281 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 80mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | CST3 |
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The RN2112ACT (TPL3) is a single, pre-biased transistor in the bipolar junction transistor (BJT) family. It is a small-signal NPN switch-mode transistor which has been specially designed and developed to operate at an extremely high frequency. It features a low operating current, wide bandwidth, low distortion and excellent switching characteristics. This technology offers an ideal solution for switching systems, power amplifiers and power converters.
The RN2112ACT is designed to operate at an output voltage of up to 37V and a drain current of up to 100mA. It has a threshold voltage of 0.4V and a maximum operating frequency of 5MHz. In order to achieve the required performance, the device has built-in bias components such as the base resistor, base voltage divider and collector feedback elements. The base resistor and base voltage divider ensure that the transistor is properly biased and the collector feedback elements ensure that the output voltage is maintained within the acceptable range.
The device has an on-state resistance of 2.6Ω and an off-state resistance of 28.5Ω. It also has a very low input capacitance of 4.3pF, making it an excellent choice for high-speed switching applications. The addition of the built-in bias components also makes this device ideal for applications which require accurate and stable temperatures.
The RN2112ACT can also be used as a voltage amplifier as it has a very high gain-bandwidth product of 8.2V/MHz. It is also suitable for use in oscillator and digital circuits due to its very low input capacitance. Additionally, the device has a very low reverse leakage current of 1μA, which makes it an ideal choice for high-current applications.
Overall, the RN2112ACT is an ideal choice for applications which require high performance and reliability. Its built-in bias components, wide bandwidth, low operating current, low input capacitance and excellent switching characteristics make it an ideal solution for switching systems, power amplifiers and power converters. Its very high gain-bandwidth product, low reverse leakage current and low on-state resistance also make it an excellent choice for voltage amplification, oscillator and digital circuits.
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