RN2108ACT(TPL3) Discrete Semiconductor Products |
|
| Allicdata Part #: | RN2108ACT(TPL3)TR-ND |
| Manufacturer Part#: |
RN2108ACT(TPL3) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS PNP 0.1W CST3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: | RN2108ACT(TPL3) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 80mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 22 kOhms |
| Resistor - Emitter Base (R2): | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | CST3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RN2108ACT(TPL3) is an example of single pre-biased bipolar transistors (BJT). It is often used in applications such as steering, switching and other similar applications. The pre-bias feature allows it to be used in a wide variety of circuits, as it can be used with low supply voltages and stable at low current levels. This makes it remarkably versatile and allows it to offer a great deal of flexibility in a variety of applications.
A pre-biased transistor is one that has had its base-emitter junction biased so that the base-to-emitter current (IBE) is larger than the collector-to-emitter current (ICE). This makes the transistor more efficient by reducing the amount of current leakage from the collector-to-emitter junction. Pre-biasing also provides a much higher impedance in the base-emitter junction, which helps to reduce voltage swing and reduce power consumption.
The working principle of the RN2108ACT(TPL3) is relatively simple. When the transistor is supplied with a sufficiently high current (ICB) at the collector-base junction, the current is forced to flow through the base-emitter junction, causing electrons to flow from the emitter to the base. As the current is increased, the base-emitter voltage (VBE) also rises, until it reaches its saturation voltage. At this point, the collector-emitter current (ICE) is at its maximum and the transistor is said to be in its active region.
When the transistor is in its active region, it behaves like a normal bipolar transistor, meaning that current can flow from the collector to the emitter if a suitable bias voltage is applied. This allows the transistor to be used in a wide variety of applications, such as amplifier and switching circuits. Additionally, the pre-biased nature of the transistor helps to reduce power consumption and improve signal characteristics.
The RN2108ACT(TPL3) is one of the most popular pre-biased transistors available. Its high current gain and low saturation voltage make it ideal for applications such as switching, amplification and current steering. Moreover, its pre-biased feature allows the transistor to be used with a wide range of current sources, making it incredibly versatile. As such, the RN2108ACT(TPL3) is an invaluable addition to any engineer’s toolbox.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| RN218-1-02-22M | Schaffner EM... | 1.46 $ | 500 | CMC 22MH 1A 2LN TH22mH @ ... |
| RN214-0.3-02 | Schaffner EM... | 1.97 $ | 144 | CMC 47MH 300MA 2LN TH47mH... |
| RN2114MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN214-2-02-2M2 | Schaffner EM... | 1.25 $ | 459 | CMC 2.2MH 2A 2LN TH2.2mH ... |
| RN214-1.5-02 | Schaffner EM... | 1.87 $ | 900 | CMC 6.8MH 1.5A 2LN TH6.8m... |
| RN2112,LF(CT | Toshiba Semi... | 0.03 $ | 3000 | TRANS PREBIAS PNP 50V 0.1... |
| RN2112CT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS PNP 0.05W C... |
| RN2101ACT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS PNP 0.1W CS... |
| RN2111CT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS PNP 0.05W C... |
| RN216-1-02-10M | Schaffner EM... | 1.5 $ | 481 | CMC 10MH 1A 2LN TH10mH @ ... |
| RN2117MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN2106CT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS PNP 0.05W C... |
| RN2104MFV,L3F | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS PNP 50V 500... |
| RN2103MFV,L3F | Toshiba Semi... | 0.0 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN212-0.4-02 | Schaffner EM... | 0.0 $ | 1000 | CMC 39MH 400MA 2LN TH39mH... |
| RN2115MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN2130MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN2107CT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS PNP 0.05W C... |
| RN212-3.6-02-0M4 | Schaffner EM... | 1.23 $ | 491 | CMC 400UH 3.6A 2LN TH400H... |
| RN216-0.5-02-27M | Schaffner EM... | 1.5 $ | 500 | CMC 27MH 500MA 2LN TH27mH... |
| RN214-0.3-02-47M | Schaffner EM... | 1.25 $ | 473 | CMC 47MH 300MA 2LN TH47mH... |
| RN2101,LF(CT | Toshiba Semi... | 0.03 $ | 6000 | TRANS PREBIAS PNP 0.1W SS... |
| RN212-0.8-02 | Schaffner EM... | 0.0 $ | 1000 | CMC 10MH 800MA 2LN TH10mH... |
| RN2109ACT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS PNP 0.1W CS... |
| RN2115,LF(CB | Toshiba Semi... | 0.03 $ | 1000 | TRANS PREBIAS PNP 50V 0.1... |
| E3FB-RN21 | Omron Automa... | 64.61 $ | 5 | SENSOR PHOTO RETRO METAL ... |
| RN214-0.5-02-56 | Schaffner EM... | 0.0 $ | 1000 | COMMON MODE CHOKE 56MH 50... |
| RN21-I/RM | Microchip Te... | 0.0 $ | 1000 | RF TXRX MODULE BLUETOOTH |
| RN2110MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN218-1.1-02-15M | Schaffner EM... | 1.46 $ | 500 | CMC 15MH 1.1A 2LN TH15mH ... |
| RN2111MFV,L3F | Toshiba Semi... | 0.02 $ | 1000 | X34 PB-F VESM TRANSISTOR ... |
| RN212-1.2-02 | Schaffner EM... | 0.0 $ | 1000 | CMC 6.8MH 1.2A 2LN TH6.8m... |
| RN2113ACT(TPL3) | Toshiba Semi... | 0.04 $ | 10000 | TRANS PREBIAS PNP 0.1W CS... |
| RN2105ACT(TPL3) | Toshiba Semi... | 0.04 $ | 10000 | TRANS PREBIAS PNP 0.1W CS... |
| RN216-0.8-02-27M | Schaffner EM... | 1.5 $ | 495 | CMC 27MH 800MA 2LN TH27mH... |
| RN2110CT(TPL3) | Toshiba Semi... | 0.0 $ | 1000 | TRANS PREBIAS PNP 0.05W C... |
| RN212-0.5-02-27M | Schaffner EM... | 1.23 $ | 515 | CMC 27MH 500MA 2LN TH27mH... |
| RN212-1.5-02 | Schaffner EM... | 0.0 $ | 1000 | CMC 3.3MH 1.5A 2LN TH3.3m... |
| RN214-1.2-02 | Schaffner EM... | 0.0 $ | 1000 | CMC 10MH 1.2A 2LN TH10mH ... |
| RN214-2-02 | Schaffner EM... | 0.0 $ | 1000 | CMC 4.2MH 2A 2LN TH4.2mH ... |
TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
TRANS PREBIAS NPN 250MW SMT3Pre-Biased B...
TRANS PREBIAS NPN 500MW TO92-3Pre-Biased...
RN2108ACT(TPL3) Datasheet/PDF