| Allicdata Part #: | RN2103(T5LFT)TR-ND |
| Manufacturer Part#: |
RN2103(T5L,F,T) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS PNP 0.1W SSM |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: |  RN2103(T5L,F,T) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 22 kOhms |
| Resistor - Emitter Base (R2): | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | 200MHz |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-75, SOT-416 |
| Supplier Device Package: | SSM |
Description
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The RN2103 (T5L, F, T) is a single, pre-biased, bipolar junction transistor. It is an NPN transistor constructed from an epitaxial silicon structure which has an integrated high voltage E-MOSFET gate structure. In order to achieve good isolation, the drain-base junction of the transistor is pre-biased with a gate voltage of -3.3V. This ensures that the transistor is fully off when un-powered and that the gate voltage is not affected by the main supply voltage.
The RN2103 (T5L, F, T) has many applications in both analog and digital circuits. It is used in power supply voltage sensing, power supply current monitoring, battery monitoring, AC-DC converters, voltage and current controllers, automotive applications, and many other applications. The versatile characteristics of the RN2103 allow it to be used in a variety of different applications.
The RN2103 is designed to provide high performance in a variety of different environments. The transistor has a wide range of operating temperatures and can operate up to a maximum junction temperature of +150°C. The device is RoHS compliant, has a very low power dissipation, and is highly reliable.
The working principle of the RN2103 is relatively simple. The transistor consists of three layers, two layers of diffusion material, and a third layer which acts as a gate for the device. When a voltage is applied to the gate, it causes a change of current flow across the transistor. This current flow can be either positive or negative depending on the direction of the applied voltage.
The RN2103 can be used in either common emitter or common collector configurations. In the common emitter configuration, the voltage at the base of the device is less than 0.7V higher than the forward bias applied at the emitter. This allows electrons to flow from the emitter to the collector. In the common collector configuration the voltage applied at the emitter is equal to or less than the voltage applied at the collector. This results in the electrons being attracted by the collector, resulting in a decrease in the voltage at the base of the transistor.
The RN2103 can also be used in circuit protection, overvoltage and undervoltage protection, and peak current limiting. The pre-biased feature of the device allows it to be used in high voltage applications. It can also be used as a driver for insulated gate bipolar transistors (IGBTs).
The RN2103 is a very versatile device which can be used in many applications. Its pre-biased feature ensures that the transistor is off when un-powered, and its wide operating temperature range allows it to be used in extreme conditions. It has also been designed with a very low power dissipation, ensuring its reliability in high temperature and high voltage applications.
The specific data is subject to PDF, and the above content is for reference
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