RN2104ACT(TPL3)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	80mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	100mW
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	CST3

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Introduction

The RN2104ACT(TPL3) is a single, pre-biased bipolar junction transistor (BJT) designed for high-reliability applications. It has superior switching speed and low power consumption which makes it suitable for use in a variety of applications, from power supplies to RF amplifiers. The RN2104ACT is a cost-effective solution for those needing high-reliability performance in a low-cost device.

Application Field

The RN2104ACT(TPL3) has a wide variety of applications. It is an excellent choice for use in power supplies, as it has excellent high frequency switching capacity, low power consumption, and a wide range of operating voltages. Additionally, nurse detector circuits, current mode logic and pulse amplifiers, timers, and time delay circuits can all benefit from the superior switching speed and low power consumption of the RN2104ACT. Other applications include power amplifiers, gain selectable video amplifiers, video matrix switch circuits, and signal switching circuits.

Working Principle

The RN2104ACT(TPL3) is a single, pre-biased BJT device designed for high-reliability applications. It is a single, pre-biased BJT which means that two voltage levels are pre-biased into the device, allowing for improved switching speed and low power consumption. The device works by conductively modulating an electrical current between two terminals, which can be used to amplify signals, switch signals, control power, etc.

Advantages

The RN2104ACT(TPL3) offers several advantages over other BJTs. It has superior switching speed compared to other single pre-biased BJTs, and it consumes less power than other BJTs. Additionally, it is cost-effective compared to other BJTs, which makes it an attractive device for applications that require high-reliability performance in a low-cost device. Moreover, the RN2104ACT has high immunity to temperature, voltage, and other environmental changes as compared to other BJTs.

Conclusion

The RN2104ACT(TPL3) is an excellent single, pre-biased bipolar junction transistor designed for high-reliability applications. It has superior switching speed and low power consumption which make it an ideal choice for use in power applications, as well as in other high-reliability applications such as RF amplifiers, power amplifiers, and video switching circuits. Moreover, the RN2104ACT is cost-effective compared to other BJTs, and it has high immunity to environmental changes, making it an attractive choice for those needing high-reliability performance at a low cost.

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