Allicdata Part #: | RN2107MFVL3F-ND |
Manufacturer Part#: |
RN2107MFV,L3F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS PREBIAS NPN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | RN2107MFV,L3F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VESM |
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The RN2107MFV,L3F is a type of single-bipolar, pre-biased transistor. This means that a transistor that is set with a predetermined bias voltage, as opposed to one which must be externally biased in order to function. These types of transistors are typically used in applications where the established bias voltage allows for more accurate and reliable control of current during operation.
In the RN2107MFV,L3F transistor, the base and emitter are connected through a single junction. This junction is then biased at a predetermined level; most commonly either 1.5V or 3V. The third connection is the collector, which is normally biased to 5V relative to the emitter. This is done in order to ensure that a sufficiently high current passes through the device to effectively conduct the desired signals.
Once the transistor is properly connected, the operation is fairly straightforward. When a voltage is applied to the emitter, the electrons begin to flow from the emitter to the base. This process creates a greater number of electrons in the base than there were originally, and this in turn causes a charge imbalance at the junction between the base and the collector. This charge imbalance causes a large current to flow from the collector to the base. The resulting current produced by the collector will then be used to conduct the desired signals, and the base serves as a kind of control mechanism which can be used to adjust the amount of current being produced in order to more precisely control the signals.
The RN2107MFV,L3F is most commonly used in applications such as audio amplifiers, circuit switching, and pulse modulation. It is also often used in communication systems and other high-speed signal applications, due to its ability to quickly and accurately relay signals. This type of transistor is suitable for many types of circuitry, and the low noise levels produced make it ideal for use in environments where noise must be suppressed.
Overall, the RN2107MFV,L3F is an excellent choice for a wide range of applications, as it provides high levels of efficiency and accuracy. The ability to control the current passing through the transistor with great precision helps to ensure that the desired signals are produced with minimal interference or noise. The fact that it is pre-biased also simplifies the process of installation, as no external circuitry is required in order to make it operate correctly.
The specific data is subject to PDF, and the above content is for reference
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