RN2703JE(TE85L,F) Allicdata Electronics
Allicdata Part #:

RN2703JE(TE85LF)TR-ND

Manufacturer Part#:

RN2703JE(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2PNP PREBIAS 0.1W ESV
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: RN2703JE(TE85L,F) datasheetRN2703JE(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV
Description

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RN2703JE (TE85L,F) is a pre-biased complementary array of NPN and PNP bipolar transistors. This array is offered in a cost-effective, ultra-small DFN3 x3 RoHS compliant 3-pin package. It includes a diode-connected NPN with a common emitter pad, a PNP with a common base pad, and a common collector pad. It is designed for applications requiring superior power and reliability, such as motor control, battery charging, and monitoring.

The pre-biased NR2703JE (TE85L,F) has a unique design which is capable of producing higher gain than conventional designs. Its low operating current and power dissipation allow for better energy efficiency and extend battery life. In addition, the array has excellent reliability, with a wide temperature range and a long shelf life. This array is also available in an additional version, the NR2703JE (TE85L,I), which is a 4-pin package that eliminates the separate common pads and takes only one bonding wire connection.

The NR2703JE (TE85L,F) array works on the principle of a MOSFET transistor, in which a gate voltage is applied to control current flow. This type of transistor offers low on-resistance and can be used to switch off devices quickly and accurately. The pre-biased array provides an efficient solution to replace a single complementary transistor. It has higher gain and improved immunity to temperature fluctuations than a discrete transistor. The transistors in this array are designed to be biased at the same temperature, reducing thermal stress across the array and providing a wider temperature and voltage range.

The NR2703JE (TE85L,F) array is suitable for a variety of devices such as voltage regulators, battery charging controllers, motor control circuits, low power amplifier circuits, active filters, and RF amplifiers. It can be used for current, voltage, or power control. The array also has applications in switching AC/DC power sources, like power supplies, and in medical and industrial power applications.

The NR2703JE (TE85L,F) array is an ideal solution for small form factor applications, as it contains all the essential components in one cost-effective package. This array is also easily programmable and its high reliability makes it suitable for harsh and extreme environments. In addition, the NR2703JE (TE85L,F) offers optimized operation of the power and control environment by offering the necessary protection and temperature stability.

The specific data is subject to PDF, and the above content is for reference

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