RN2704JE(TE85L,F) Allicdata Electronics
Allicdata Part #:

RN2704JE(TE85LF)TR-ND

Manufacturer Part#:

RN2704JE(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2PNP PREBIAS 0.1W ESV
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: RN2704JE(TE85L,F) datasheetRN2704JE(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV
Description

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The RN2704JE(TE85L,F) is a type of bipolar junction transistor used for a variety of applications. The transistor is an array of transistors that are pre-biased to reduce the effects of any non-ideal biasing conditions within the circuit. The transistor serves numerous purposes in modern electronics and its use can range from precision digital applications to light-duty general purpose applications.

The RN2704JE(TE85L,F) is primarily used in digital transistor arrays and pre-biased transistor circuit applications. Its operation is based on the use of the well-known heterojunction bipolar structure that is favoured over traditional PNP bipolar transistors. This structure enables the transistor to operate in a high-performance mode while at the same time reducing the number of components required.

The RN2704JE(TE85L,F) also has a wide range of uses in both analogue and digital circuitry. In digital circuitry, it is a preferred component for high-accuracy applications such as building frequency synthesizers and for analog application, it can be used for current-mode amplification. The transistor also functions well as a current-control device in wave-shaping applications.

As the name suggests, the RN2704JE(TE85L,F) is designed to operate with a pre-biased voltage, which enables it to have a much faster response time. The common emitter structure also allows the transistor to operate with a very low collector-emitter capacitance which reduces noise and ensures the overall accuracy of the circuit is maintained. The pre-biased voltage also increases the efficiency of the transistor.

The basic operating principle of the RN2704JE(TE85L,F) is based on a three-terminal device. The two base terminals are connected together and serve as the control element of the device. When current is applied to the base, it causes a decrease in resistance across the collector-emitter junction resulting in a change in the collector current. This current change is dependent on the amount of current applied to the base.

The RN2704JE(TE85L,F) has a wide range of uses and applications. It can be used in a variety of digital circuits, such as frequency synthesizers, current-mode amplifiers, logic buffers and wave-shaping circuits. It can also be used as a current-control device in a variety of analog circuits, such as voltage-controlled oscillators, switched capacitor filters, monostables and astables.

In conclusion, the RN2704JE(TE85L,F) is a type of pre-biased transistor array that has many uses in digital and analog circuits. Its wide range of applications makes it a popular choice for many circuit designers due to its high performance and accuracy. Furthermore, its use of pre-biased voltage ensures improved response times and better overall accuracy in the circuit design.

The specific data is subject to PDF, and the above content is for reference

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