RN2711(TE85L,F) Allicdata Electronics

RN2711(TE85L,F) Discrete Semiconductor Products

Allicdata Part #:

RN2711(TE85LF)TR-ND

Manufacturer Part#:

RN2711(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2PNP PREBIAS 0.2W USV
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: RN2711(TE85L,F) datasheetRN2711(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV
Description

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Introduction

The RN2711 (TE85L,F) is a pre-biased, high-voltage bipolar transistor array. It is designed to be incorporated into hybrid systems, and is an essential component for many advanced systems. This transistor has integrated protection circuits and capabilities, making it incredibly reliable and safe for a variety of applications. This paper will discuss the application field and working principle of the RN2711 (TE85L,F).

Application Field

The RN2711 (TE85L,F) is a versatile device that is suitable for use in many applications. It is most commonly used in the automotive and industrial industries. It is used for audio amplifiers, power supplies, DC-DC converters, power controls, motor control circuits, and automotive infotainment systems. Furthermore, its integrated protection circuits make it a top choice for use in high-temperature environments, as they protect the device from excessive current, temperature, and voltage. The RN2711 (TE85L,F) can also be used in instrumentation, medical, and communications systems.

Working Principle

The RN2711 (TE85L,F) uses an array of transistors in a pre-biased arrangement. The base of each transistor is connected to the emitter of another transistor in the array, which enables the transistor array to operate at a exponentially higher voltage than any of the individual transistors could support on their own. The base voltage of the transistors is fed between the collectors of the transistors and is also used to drive the current. The base voltage must be carefully balanced and must not exceed the breakdown voltage of the transistors.

The RN2711 (TE85L,F) can be used to create a large power transistor array. In this type of configuration, each transistor in the array is connected in parallel to increase the current capacity of the array, while each transistor is connected in series to decrease the voltage drop across the array. The base voltage of the transistors can be used to adjust the current and voltage of the array. The transistors are typically biased to reduce the current drain and improve efficiency.

End

The RN2711 (TE85L,F) is a versatile, pre-biased, high-voltage bipolar transistor array. It is suitable for many applications, including automotive, industrial, instrumentation, medical, and communications systems. Its integrated protection circuits make it a safe and reliable component for systems that require high voltage operations and high temperature environments. The base voltage of the transistors is fed between the collectors, and it can be used to adjust the current and voltage of the transistor array.

The specific data is subject to PDF, and the above content is for reference

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