
RN2711(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN2711(TE85LF)TR-ND |
Manufacturer Part#: |
RN2711(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.2W USV |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 400 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: | USV |
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Introduction
The RN2711 (TE85L,F) is a pre-biased, high-voltage bipolar transistor array. It is designed to be incorporated into hybrid systems, and is an essential component for many advanced systems. This transistor has integrated protection circuits and capabilities, making it incredibly reliable and safe for a variety of applications. This paper will discuss the application field and working principle of the RN2711 (TE85L,F).
Application Field
The RN2711 (TE85L,F) is a versatile device that is suitable for use in many applications. It is most commonly used in the automotive and industrial industries. It is used for audio amplifiers, power supplies, DC-DC converters, power controls, motor control circuits, and automotive infotainment systems. Furthermore, its integrated protection circuits make it a top choice for use in high-temperature environments, as they protect the device from excessive current, temperature, and voltage. The RN2711 (TE85L,F) can also be used in instrumentation, medical, and communications systems.
Working Principle
The RN2711 (TE85L,F) uses an array of transistors in a pre-biased arrangement. The base of each transistor is connected to the emitter of another transistor in the array, which enables the transistor array to operate at a exponentially higher voltage than any of the individual transistors could support on their own. The base voltage of the transistors is fed between the collectors of the transistors and is also used to drive the current. The base voltage must be carefully balanced and must not exceed the breakdown voltage of the transistors.
The RN2711 (TE85L,F) can be used to create a large power transistor array. In this type of configuration, each transistor in the array is connected in parallel to increase the current capacity of the array, while each transistor is connected in series to decrease the voltage drop across the array. The base voltage of the transistors can be used to adjust the current and voltage of the array. The transistors are typically biased to reduce the current drain and improve efficiency.
End
The RN2711 (TE85L,F) is a versatile, pre-biased, high-voltage bipolar transistor array. It is suitable for many applications, including automotive, industrial, instrumentation, medical, and communications systems. Its integrated protection circuits make it a safe and reliable component for systems that require high voltage operations and high temperature environments. The base voltage of the transistors is fed between the collectors, and it can be used to adjust the current and voltage of the transistor array.
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Part Number | Manufacturer | Price | Quantity | Description |
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RN2704JE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
RN2707JE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
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