
RN2710JE(TE85L,F) Discrete Semiconductor Products |
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Allicdata Part #: | RN2710JE(TE85LF)TR-ND |
Manufacturer Part#: |
RN2710JE(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.1W ESV |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-553 |
Supplier Device Package: | ESV |
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The RN2710JE (TE85L,F) is a type of transistor array that is commonly used in a variety of electronic circuit applications. The transistor array is made up of two types of transistors, a pre-biased PNP and an NPN transistor. These transistors are interconnected via an array of pins, which allow the user to easily adjust the amount of current that is flowing through the circuit. The RN2710JE (TE85L,F) is designed to provide electrical isolation between the two transistors and provide the user with the ability to easily switch between the two.
The RN2710JE (TE85L,F) is typically used in a variety of digital and analog applications, such as in power supply circuits, pulse circuits, analog circuits, switching circuits and audio circuits. In addition, this type of transistor array can also be used in applications that require increased power efficiency and reduced power dissipation. The transistor array can provide a range of different voltage levels and can be programmed in a number of different ways to meet the needs of the application.
In terms of working principle, the RN2710JE (TE85L,F) relies on the principles of electron transfer and the phenomenon of a “floating gate”. The floating gate theory states that when electrons are transferred from one material to another, the potential of the material which the electrons were transferred from will remain the same, whereas the material which the electrons were transferred to will become charged. This is why the RN2710JE (TE85L,F) is able to control the amount of current flowing through the circuit, by controlling the voltage level at which the electrons transfer.
In terms of its application field, the RN2710JE (TE85L,F) is most commonly used in digital and analog circuits. The transistor array can be used to create switches and control the voltage level in various types of circuitry. For example, the transistor array can be used to control the level of current required to power an LED display or to adjust the speed at which a motor turns. The RN2710JE (TE85L,F) can also be used in optical applications, such as for controlling the light emission from an LED or for controlling the fluctuations in the intensity of light in an LED array.
In summary, the RN2710JE (TE85L,F) is a type of transistor array commonly used in digital and analog circuits. The RN2710JE (TE85L,F) relies on electron transfer and the floating gate theory to control the amount of current flowing through the circuit. The transistor array can be used in a variety of applications, including the creation of switches, controlling the voltage level of LED displays, controlling the speed at which a motor turns, and controlling the amount of light emission from an LED array. These are just some of the applications that the RN2710JE (TE85L,F) can be applied to, making it a popular choice in a variety of electronic circuits.
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Part Number | Manufacturer | Price | Quantity | Description |
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RN2704JE(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.1W E... |
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