Allicdata Part #: | RN2713JE(TE85LF)TR-ND |
Manufacturer Part#: |
RN2713JE(TE85L,F) |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2PNP PREBIAS 0.1W ESV |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | RN2713JE(TE85L,F) Datasheet/PDF |
Quantity: | 4000 |
4000 +: | $ 0.05557 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-553 |
Supplier Device Package: | ESV |
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The RN2713JE (TE85L,F) is a type of transistor array, pre-biased and designed for power applications. Bipolar transistor arrays are components that integrate a number of transistors into one package, allowing more transistors to be used in a circuit while keeping the design relatively simple and compact. This type of transistor array is especially useful in applications where space requirements are an important factor. The RN2713JE also offers advantages in applications where both power and speed are important.
The RN2713JE is a current-source Darlington transistor array.This type of transistor array is pre-biased towards one direction, typically either high or low, and this bias helps the circuit achieve appropriate operation while providing the requisite performance.A current-source Darlington array is a much faster type of transistor array than other common arrays, such as current-mirror arrays.Therefore, the RN2713JE is often used in applications that require a lot of speed and power, such as battery-powered devices and automotive electronics.
The RN2713JE also has a built-in voltage regulator, allowing it to provide robust and consistent performance, even when the input voltage is intermittent or variable.This makes it ideal for applications in automotive and industrial settings where reliability is paramount.The built-in ESD diode protection helps protect the device from damage caused by electrostatic discharge, and the wide common-mode rejection range helps ensure stable performance.
The RN2713JE is designed to provide excellent power efficiency and thermal performance.It has a nominal gain of 30 V/V and a current gain of 1000.The power supply requirements are 9V to 50V, making it suitable for a wide range of applications.In addition, the low saturation voltage of 500mV and the thermal resistance of 2.4K/W also allow for excellent thermal performance.
These characteristics make the RN2713JE an ideal choice for many power applications, from automotive electronics to industrial machinery.With its high speed and power efficiency, pre-biased design, built-in voltage regulator, ESD protection, and wide common-mode rejection range, the RN2713JE is an excellent choice for applications that require reliability, robustness, and performance.
The specific data is subject to PDF, and the above content is for reference
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