RN2712JE(TE85L,F) Allicdata Electronics
Allicdata Part #:

RN2712JE(TE85LF)TR-ND

Manufacturer Part#:

RN2712JE(TE85L,F)

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2PNP PREBIAS 0.1W ESV
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: RN2712JE(TE85L,F) datasheetRN2712JE(TE85L,F) Datasheet/PDF
Quantity: 4000
4000 +: $ 0.05557
Stock 4000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV
Description

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RN2712JE(TE85L,F) transistors is a class of complex integrated circuit that can be used in a variety of applications. The most common type of transistor array is the pre-biased array, which contains multiple transistors and allows multiple currents to pass through the same circuit. The RN2712JE(TE85L,F) is a pre-biased array, which stands for "Routing Network Device" and features two sub circuits: one bipolar transistor die, and one gate-controlled resistor.

The transistors in the pre-biased array are arranged in a two-dimensional grid based on a single-stage routing network, with the current inputs connected to both the input and output terminals. The pre-biased array is designed to provide both high-speed on- and off-switching and large current-handling capabilities. This makes this IC particularly well-suited for applications such as high-current semiconductor device monitoring and control.

The RN2712JE(TE85L,F) pre-biased array works on a simple principle. When the gate voltage of the transistor is above a certain threshold, it turns on, allowing current to flow through the circuit. When the gate voltage of the transistor is below a certain threshold, it turns off, blocking current flow.

The RN2712JE(TE85L,F) transistor array can be used in a variety of applications, including power electronics, computer control systems, motion control, analog-to-digital conversion (ADCs), digital-to-analog conversion (DACs), logic circuits, and digital signal processors (DSP). It is also used in pulsed power supply applications, motor control, and power generation.

The RN2712JE(TE85L,F) pre-biased array is a powerful integrated circuit that can significantly improve efficiency and reduce power consumption in a wide array of applications. It is frequently used in consumer electronics, automotive, industrial and commercial applications. This IC is also well-suited for applications that require low voltage, high speed switching and a wide range of operating temperature.

The specific data is subject to PDF, and the above content is for reference

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