RN4601(TE85L,F) Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	300mW
Mounting Type:	Surface Mount
Package / Case:	SC-74, SOT-457
Supplier Device Package:	SM6

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RN4601 (TE85L,F) are bipolar junction transistors (BJT) arrays pre-biased specifically designed for amplifier applications. They are constructed with a cascode architecture and integrated collector resistors, allowing them to provide high current gains of up to 1.5, while providing low power consumption and low noise operation. The RN4601 (TE85L,F) has a maximum collector current of up to 1.2A and a maximum collector-emitter voltage of 30V.The RN4601 (TE85L,F) is designed to provide cost-effective solutions for amplifier applications and is ideal for use in audio and video systems, power supplies and other applications. The device offers high current gains, low power consumption and low noise operation, making it ideal for use in low-power, high-efficiency amplifier designs. The device features an integrated output stage and is compatible with a wide range of gate capacitances and drive waveforms. The RN4601 (TE85L,F) is available in two packages: TO-3 and TSSOP-14.The RN4601 (TE85L,F) features a very low input voltage offset, enabling it to provide better performance in high-precision, low-noise applications. The device also features a low input current, providing better performance for low-power applications. The device also features a thermal shutdown protection to ensure safe device operation.The working principle of the RN4601 (TE85L,F) is based on the principle of current gain. This principle states that the current gain (or the output current) of a BJT is the ratio of the output current to the input current. The RN4601 (TE85L,F)can provide improved performance in wide range of applications through the use of its integrated collector resistors and cascode architecture. The cascode architecture allows it to provide improved linearity and low noise performance in audio and video systems, as well as in power supplies. The integrated collector resistors in the RN4601 (TE85L,F) provide a high current gain and low power consumption, enabling the device to be used in power supplies, audio and video systems, and other applications.In summary, the RN4601 (TE85L,F) is a pre-biased BJT array designed for amplifier applications. It features a cascode architecture and integrated collector resistors, allowing it to provide high current gains of up to 1.5, while providing low power consumption and low noise operation. The device is available in two packages and is ideal for use in audio and video systems, power supplies and other applications. The working principle behind the RN4601 (TE85L,F) is based on the principle of current gain and its use of integrated collector resistors and cascode architecture allow it to provide better electrical performance and wider operational range.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description