RN4610(TE85L,F)

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The RN4610(TE85L,F) is a bipolar junction transistor (BJT) array, pre-biased specifically designed to provide high speed switching with low on-resistance and low power consumption. As such, this device is particularly useful in applications that require a fast output response time and low heat generation. The device is preferentially suited for logic gate applications, such as in high frequency oscillators, current limiting, voltage referencing, and clock generator circuits.

The RN4610(TE85L,F) consists of two NPN BJT devices in a single package with an internal bias resistor; its operating temperature range is from -40°C to +125°C. The device is a two stage isolated collector array with an integrated pull-up resistor; it has an operating voltage of up to 70V and a collector current rating of up to 100mA. It also includes an internal diode for reverse polarity protection.

In the RN4610(TE85L,F), the two NPN BJT’s are combined in an array form, providing a higher current drive capability than found in a single NPN transistor. This added current drive capability allows the device to drive higher load currents, while still providing fast switching speeds even in applications where low on-resistance is needed. The device also takes less board space than two single transistors.

The RN4610(TE85L,F) is designed to provide a high speed output response time and low heat generation. Its integrated pull-up resistor allows the device to reach its switching speed quicker than would be possible with a separate pull-up resistor. The low on-resistance of the device facilitates a fast switching time and helps reduce power loss from conduction in the device. The integrated diode is designed to protect the device from reverse polarization, ensuring the device operates as intended.

The RN4610(TE85L,F) has a number of advantages over standard single transistors for many applications. For example, the higher current capacity of the RN4610(TE85L,F) allows it to drive heavier loads than a single transistor, which increases the flexibility of the applications it can be used for. Additionally, the low on-resistance and the integrated pull-up resistor make the device well-suited for use in high frequency oscillators, current limiting, voltage referencing and clock generator circuits. Furthermore, the integrated diode makes the RN4610(TE85L,F) inherently more reliable than a single transistor as it provides protection against damage resulting from reverse Polarization

The RN4610(TE85L,F) is a versatile device designed to provide high speed switching with low on-resistance and low power consumption in a range of applications. Its internal bias resistor and diode provide protection and reliability, while the added current capacity gives it the flexibility to be used for a wide range of circuits. The RN4610(TE85L,F) is an ideal choice for logic gate applications, current limiting, voltage referencing and clock generator circuits.

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