Allicdata Part #: | RN4609(TE85LF)TR-ND |
Manufacturer Part#: |
RN4609(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN/PNP PREBIAS 0.3W SM6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | RN4609(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SM6 |
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The RN4609(TE85L,F) is a type of Bipolar Junction Transistor (BJT), specifically a transistor array with pre-biased pins. It consists of a central processor unit and fourteen unique I/O pins, which are arranged into a single block for easy connection and use. The various features and characteristics of this type of transistor make it an ideal choice for a wide range of applications, from simple audio circuits and logic operations to complex switching applications.
The main feature of the RN4609(TE85L,F) is its pre-biased design. This means that it is possible to create the necessary biasing for the current and voltage of the transistors’ current draw without having to manually adjust the circuit parameters or components. This simplifies the process of creating the desired output, saving time and effort in the engineering process. This also reduces the size of the circuit due to its pre-biased design, further saving space when constructing a larger circuit.
The typical application range of the RN4609(TE85L,F) is wide and varied. This makes it the ideal choice for a wide range of applications, such as power control and circuit protection. It can also be used in a variety of analog and digital circuits, such as audio circuits and logic operations. Similarly, this transistor array can be used to drive multiple-load circuits, and it can also be used for switching applications, such as logic gates, diode logic and other such circuits.
The working principle of RN4609(TE85L,F) is similar to that of other transistors. It utilizes a PN junction between two semiconductors, and through it is able to transfer electrical current of one type (in this case, the N-type) to another type (P-type). This process relies on the JFET mechanism, and it is a relatively straightforward process compared to other transistors. Additionally, since it is a pre-biased device, the current and voltage are already pre-set, meaning that the user does not have to manually adjust any parameters.
In conclusion, the RN4609(TE85L,F) is a type of Bipolar Junction Transistor (BJT) which is a pre-biased transistor array with fourteen I/O pins. These pins can be used to create the necessary biasing for the current and voltage of the transistor’s current draw, simplifying the engineering process. The transistor can be used for a wide range of applications, and it utilizes the JFET mechanism for its operations. Consequently, it makes an ideal choice for a wide range of projects, from basic audio circuits and logic operations to complex switching applications.
The specific data is subject to PDF, and the above content is for reference
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