Allicdata Part #: | RN4608(TE85LF)TR-ND |
Manufacturer Part#: |
RN4608(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN/PNP PREBIAS 0.3W SM6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | RN4608(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 200MHz |
Power - Max: | 300mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-74, SOT-457 |
Supplier Device Package: | SM6 |
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RN4608(TE85L,F) is a pre-biased array of bipolar transistors (BJTs) made from silicon and isotopically enriched Germanium. This type of BJT array is especially useful in radio frequency circuits, and provides improved linearity and isolation between its various output stages.The RN4608(TE85L,F) consists of two NPN transistors - a low power NPN device and a high power NPN device - connected in parallel and prebiased to deliver linear performance. The low power NPN transistor offers low power dissipation for sensing and amplification circuits, while the high power NPN transistor has a significantly improved output stage and power dissipation.The application field of RN4608(TE85L,F) is wide and includes signal-processing, audio amplifiers, RF amplifiers, RF amplifiers in automotive designs and power supplies. These BJT array transistors offer improved linearity and performance compared to single transistors and are particularly well-suited for applications that require low power dissipation, high isolation, and improved frequency response.In terms of working principle, RN4608(TE85L,F) operates much like a regular single transistor, but with two transistors connected in parallel and prebiased to provide a higher gain and better performance. The low power NPN transistor serves as a buffer device and provides a low barrier to the flow of the output signal, while the high power NPN transistor has the amplifying ability.The prebiased output requires less power to drive the output stage and therefore, RN4608(TE85L,F) transistors can provide better power efficiency compared to single transistors. Moreover, these transistors have an improved frequency response and are better capable of filtering out unwanted noise.Finally, due to the additional features and improved characteristics that this pre-biased array offers, RN4608(TE85L,F) transistors are also very useful in applications that require high isolation, high linearity, and high frequency response. As such, these transistors are suitable for use in audio amplifiers and signal processing devices, as well as automotive, power supply and RF amplifiers.In conclusion, the RN4608(TE85L,F) is an example of pre-biased BJT array transistors, featuring two NPN transistors connected in parallel and prebiased to deliver linear performance. This type of transistor array is especially useful in radio frequency circuits, and can provide improved linearity, isolation between its output stages, and better frequency response compared to single transistors. Additionally, the transistors offer better power efficiency compared to single transistors and are suitable for use in a wide range of applications, such as signal processing, audio amplifiers, RF amplifiers, automotive designs, and power supplies.
The specific data is subject to PDF, and the above content is for reference
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