RQ1A060ZPTR Allicdata Electronics

RQ1A060ZPTR Discrete Semiconductor Products

Allicdata Part #:

RQ1A060ZPTRTR-ND

Manufacturer Part#:

RQ1A060ZPTR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 12V 6A TSMT8
More Detail: P-Channel 12V 6A (Ta) 700mW (Ta) Surface Mount TSM...
DataSheet: RQ1A060ZPTR datasheetRQ1A060ZPTR Datasheet/PDF
Quantity: 48000
Stock 48000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 1mA
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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RQ1A060ZPTR transistors, also known as Field-Effect Transistors (FETs), consist of three-terminal semiconductor devices. FETs are used to enhance and control the flow of electrical currents in various kinds of electrical circuits. RQ1A060ZPTR transistors are specifically designed for power management applications.

Power management transistors are regulated devices, that help reduce the energy consumption of electrical systems, by controlling the flow of electricity. By utilizing power management transistors, a design engineer can create efficient and dependable electrical systems, that consume minimal power budget.

RQ1A060ZPTR transistors are single-gate MOSFETs. A single-gate MOSFET is a transistor with one gate terminal. The gate terminal is a three-terminal component, and the other two terminals are called drains and sources respectively.

RQ1A060ZPTR transistors are widely used in various power management applications. In automotive applications, this type of transistor is used for power conversion, such as powering and controlling headlights. In home appliances, such as audio amplifiers, energy metabolism transistors are used for controlling and regulating the current, reducing energy wastage and improving audio quality.

The operating principle of a single-gate MOSFET is relatively simple. When a voltage is applied to the gate terminal, it attracts the electrons to the surface of the semiconductor substrate and forms an inversion layer. This inversion layer acts like a conducting channel between the drain and source terminals, allowing current to flow. By applying different voltages to the gate terminal, the inversion layer can be modulated, and the current flow can be controlled.

The RQ1A060ZPTR transistors are optimized for low-voltage applications, and can operate efficiently at voltages as low as 0.8 volts. They are also designed for low-power applications, and consume less than 20 milliamps of current. This makes them suitable for applications with limited energy supplies.

The RQ1A060ZPTR transistors are also designed to be noise immune. They have low on-resistance and low switching noise, which makes them perfect for noise-sensitive applications. The RQ1A060ZPTR transistors have a maximum drain current of 10A and a maximum drain-source voltage of 60V, making them suitable for many low-voltage and low-power applications.

Overall, the RQ1A060ZPTR transistors are ideal for power management applications. They are designed to operate efficiently and effectively, consuming minimal energy and providing noise immunity. The device is also optimized for low-voltage applications, making it ideal for use in situations where energy supply is limited. The RQ1A060ZPTR transistors are reliable, cost-effective and versatile, making them the perfect choice for many power management applications.

The specific data is subject to PDF, and the above content is for reference

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