RQ1A070APTR Allicdata Electronics
Allicdata Part #:

RQ1A070APTR-ND

Manufacturer Part#:

RQ1A070APTR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 12V 7A TSMT8
More Detail: P-Channel 12V 7A (Ta) 550mW (Ta) Surface Mount TSM...
DataSheet: RQ1A070APTR datasheetRQ1A070APTR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 14 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs (Max): -8V
Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 6V
FET Feature: --
Power Dissipation (Max): 550mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT8
Package / Case: 8-SMD, Flat Lead
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

RQ1A070APTR is an A-MOSFET (Field Effect Transistor) family device that is widely used in many areas such as computer, telecommunication, and industrial automation and control systems. This particular device is able to handle high frequencies, enabling it to reliably operate in circulation currently applications without generating noisy and flicker-inducing transients. RQ1A070APTR is also capable of managing high currents and voltages, making it a suitable choice for powering high-end computing and other demanding applications. In this article, we\'ll discuss the application fields and working principles of the RQ1A070APTR.

Application Fields

One of the main applications of RQ1A070APTR is in computers. As most modern computers are powered by complex circuits, they require powerful transistors to manage and regulate the high frequencies and currents flowing through them. RQ1A070APTR is a suitable device for this task as it is able to successfully manage a wide range of operating frequencies from DC to GHz and has a typical on-state resistance of only 0.5ohms. This allows for more efficient management of power and efficient power utilization, providing better performance for the whole computer system. RQ1A070APTR is also often used for high frequency, large current applications such as power supplies, switching power amplifiers and motor control. The device is capable of operating at very high frequencies and currents, making it a reliable option for these power management tasks. It can handle large currents of up to 110A and can also be operated at frequencies up to 20 GHz.Apart from computers, RQ1A070APTR is also used in other areas such as telecommunications, automotive, and industrial automation and control. The transistor is capable of operating at high frequencies and large currents, making it suitable for use in these industries. Furthermore, since it is a depletion-mode device, it can be used to reliably switch low-current signals, making it suitable for use in automation and control systems.

Working Principle

RQ1A070APTR is a depletion-mode A-MOSFET. It is a three-terminal device that is composed of a metal source (S), metal drain (D) and gate (G). In operation, the gate terminal is connected to a voltage source, which when a certain voltage is applied, will act to change the voltage-dependent characteristics of the device.When an appropriate voltage is applied, the current flowing between the source and the drain will be varied depending on its characteristics. This is due to the nature of a field effect transistor, where the voltage from the gate controls the flow of current between the source and the drain. This is also what allows this device to be used in so many different circuits and applications.

Conclusion

RQ1A070APTR is a powerful depletion-mode A-MOSFET family device that is used in many areas. It is capable of operating at very high frequencies and currents, making it a suitable choice for computers and other power management tasks. It is also used in telecommunications, automotive and industrial automation and control applications. The working principle of the device is based on the voltage-dependent characteristics of a field effect transistor, whereby the voltage applied to the gate terminal will affect the current flowing between the source and the drain.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "RQ1A" Included word is 3
Part Number Manufacturer Price Quantity Description
RQ1A070ZPTR ROHM Semicon... -- 1000 MOSFET P-CH 12V 7A TSMT8P...
RQ1A060ZPTR ROHM Semicon... -- 48000 MOSFET P-CH 12V 6A TSMT8P...
RQ1A070APTR ROHM Semicon... -- 1000 MOSFET P-CH 12V 7A TSMT8P...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics